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| NTE2640 Silicon NPN Transistor Color TV Horizontal Deflection Output Features: D High Speed D High Collector-Emitter Breakdown Voltage D High Reliability D On-Chip Damper Diode Absolute Maximum Ratings: (TA + 25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Collector Dissipation, PC TA + 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W TC + 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA + 25C unless otherwise specified) Parameter Collector Cutoff Current Symbol ICBO ICES Emitter Cutoff Current Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain IEBO VCE(sat) VBE(sat) hFE VF tf Test Conditions VCE = 800V, IE = 0 VCE = 1500V, RBE = 0 VEB = 4V, IC = 0 IC = 3.15A, IB = 630mA IC = 3.15A, IB = 630mA VCE = 5V, IC = 500mA VCE = 5V, IC = 3.5A Diode Forward Voltage Fall Time IEC = 6A VCC = 200V, VBE = -2V, IC = 2A, IB1 = 400mA, IB2 = 800mA, Pulse Width = 20s, Duty Cycle 1% Min - - 40 800 - - 10 5 - - Typ - - - - - - - - - - Max 10 1.0 - - 3.0 1.5 - 8 2 0.3 V s Unit A mA mA V V V VCEO(sus) IC = 100mA, IB = 0 .177 (4.5) .394 (10.0) .138 (3.5) Isol .110 (2.8) .283 (7.2) .630 (16.0) .634 (16.1) B C E .142 (3.6) .024 (0.6) .551 (14.0) .100 (2.54) |
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