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NSS35200CF8T1G 35 V, 7 A, Low VCE(sat) PNP Transistor
ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
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35 VOLTS 7.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 78 mW
COLLECTOR 1, 2, 3, 6, 7, 8
* This is a Pb-Free Device
MAXIMUM RATINGS (TA = 25C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max -35 -55 -5.0 -2.0 -7.0 Unit Vdc Vdc Vdc Adc A
4 BASE 5 EMITTER ChipFET] CASE 1206A STYLE 4
HBM Class 3 MM Class C
PIN CONNECTIONS
C8 1C 2C 3C 4B 1 2 3 4
MARKING DIAGRAM
8 7 6 5 G4 M G
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead #1 Total Device Dissipation (Single Pulse < 10 sec) Junction and Storage Temperature Range Symbol PD (Note 1) RqJA (Note 1) PD (Note 2) RqJA (Note 2) RqJL PDsingle (Notes 2 & 3) TJ, Tstg Max 635 5.1 200 1.35 11 90 15 2.75 -55 to +150 Unit mW mW/C C/W W mW/C C/W C/W W C
C7 C6 E5
G4 = Specific Device Code M = Month Code G = Pb-Free Package
ORDERING INFORMATION
Device NSS35200CF8T1G Package ChipFET (Pb-Free) Shipping 3000/ Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ 100 mm2, 1 oz copper traces. 2. FR-4 @ 500 mm2, 1 oz copper traces. 3. Thermal response.
(c) Semiconductor Components Industries, LLC, 2006
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
1
March, 2006 - Rev. 5
Publication Order Number: NSS35200CF8T1G/D
NSS35200CF8T1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = -35 Vdc, IE = 0) Collector-Emitter Cutoff Current (VCES = -35 Vdc) Emitter Cutoff Current (VEB = -6.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 4) (IC = -1.0 A, VCE = -2.0 V) (IC = -1.5 A, VCE = -2.0 V) (IC = -2.0 A, VCE = -2.0 V) Collector -Emitter Saturation Voltage (Note 4) (IC = -0.1 A, IB = -0.010 A) (IC = -1.0 A, IB = -0.010 A) (IC = -2.0 A, IB = -0.02 A) Base -Emitter Saturation Voltage (Note 4) (IC = -1.0 A, IB = -0.01 A) Base -Emitter Turn-on Voltage (Note 4) (IC = -2.0 A, VCE = -3.0 V) Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) Input Capacitance (VEB = -0.5 V, f = 1.0 MHz) Output Capacitance (VCB = -3.0 V, f = 1.0 MHz) Turn-on Time (VCC = -10 V, IB1 = -100 mA, IC = -1 A, RL = 3 W) Turn-off Time (VCC = -10 V, IB1 = IB2 = -100 mA, IC = 1 A, RL = 3 W) 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2% hFE 100 100 100 VCE(sat) - - - VBE(sat) - VBE(on) - fT 100 Cibo Cobo ton toff - - - - - 600 85 35 225 - 650 100 - - pF pF nS nS -0.81 -0.875 MHz -0.68 -0.85 V - - - -0.10 -0.15 -0.30 V 200 200 200 - 400 - V V(BR)CEO -35 V(BR)CBO -55 V(BR)EBO -5.0 ICBO - ICES - IEBO - -0.01 -0.1 -0.03 -0.1 mAdc -0.03 -0.1 mAdc -7.0 - mAdc -65 - Vdc -45 - Vdc Vdc Symbol Min Typical Max Unit
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NSS35200CF8T1G
VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (VOLTS) 0.25 IC/IB = 50 0.20 100C 0.15 25C 0.10 0.05 0 -55C
0.1
IC/IB = 100 50 10
0.01
0.001
0.001
0.01
0.1
1.0
0.001
0.01
0.1
1.0
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage versus Collector Current
Figure 2. Collector Emitter Saturation Voltage versus Collector Current
500 450 400 hFE , DC CURRENT GAIN 350 300 250 200
VBE(sat) , BASE EMITTER SATURATION VOLTAGE (VOLTS)
125C (5 V) 125C (2 V) 25C (5 V) 25C (2 V) -55C (5 V) -55C (2 V)
1.0 0.8 0.6 0.4 0.2 0 -55C 25C 100C
150 100 50 0 0.001 0.01
0.1
1
10
0.001
0.01
0.1
1.0
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain versus Collector Current
V BE(on) , BASE EMITTER TURN-ON VOLTAGE (VOLTS) 1.1 C ibo , INPUT CAPACITANCE (pF) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.001 0.01 0.1 1.0 100C 25C -55C 750 700 650 600 550 500 450 400 350 300 0
Figure 4. Base Emitter Saturation Voltage versus Collector Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
IC, COLLECTOR CURRENT (A)
VEB, EMITTER BASE VOLTAGE (V)
Figure 5. Base Emitter Turn-On Voltage versus Collector Current
Figure 6. Input Capacitance
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NSS35200CF8T1G
225 Cobo, OUTPUT CAPACITANCE (pF) 200 175 150 IC, (A) 125 100 75 50 25 0 0.01 0 5.0 10 15 20 25 30 35 0.10 1 VCE, (Vdc) 10 100 1.00 Thermal Limits 0.10 10 1s 1 ms 10 ms 100 ms
VCB, COLLECTOR BASE VOLTAGE (V)
Figure 7. Output Capacitance
Figure 8. Safe Operating Area
R(t), TRANSIENT THERMAL RESISTANCE
1000 D = 0.10 100 D = 0.20 10 D = 0.05 1 D = 0.01 t1 0.1 Single Pulse t2 Duty Cycle = D = t1/t2 qJC = 174C/W t1, TIME (Sec) D = 0.50 P(pk)
0.01
Figure 9. Normalized Thermal Response
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NSS35200CF8T1G
PACKAGE DIMENSIONS
ChipFET CASE 1206A-03 ISSUE PRELIMINARY
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. MILLIMETERS MIN MAX 2.95 3.10 1.55 1.70 1.00 1.10 0.25 0.35 0.65 BSC 0.10 0.20 0.28 0.42 0.55 BSC 5 NOM 1.80 2.00 INCHES MIN MAX 0.116 0.122 0.061 0.067 0.039 0.043 0.010 0.014 0.025 BSC 0.004 0.008 0.011 0.017 0.022 BSC 5 NOM 0.072 0.080
A
8 7 6 5
M K
5 6 3 7 2 8 1
S
1 2 3 4
B
4
L G
D
J
C 0.05 (0.002)
STYLE 4: PIN 1. COLLECTOR 2. COLLECTOR 3. COLLECTOR 4. BASE 5. EMITTER 6. COLLECTOR 7. COLLECTOR 8. COLLECTOR
DIM A B C D G J K L M S
SOLDERING FOOTPRINT*
2.032 0.08 0.457 0.018 0.635 0.025 1.727 0.068 2.032 0.08
0.457 0.018 0.711 0.028 0.66 0.026
SCALE 20:1 mm inches
0.178 0.007 0.711 0.028 0.66 0.026
SCALE 20:1 mm inches
Basic
Style 4
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NSS35200CF8T1G
ChipFET is a trademark of Vishay Siliconix.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
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NSS35200CF8T1G/D

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