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| NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 2 - NOV 93 MPSA12P E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at T amb=25C Operating and Storage Temperature Range SYMBOL V CES V EBO IC P tot T j:T stg VALUE 20 10 500 625 -55 to +150 UNIT V V mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current SYMBOL V (BR)CES MIN. 20 TYP. MAX. UNIT V CONDITIONS. I C=100A, I B=0* V CE=15V, V BE=0 I CES 100 nA I CBO 100 nA VCB=15V, I E=0 Emitter Cut-Off Current I EBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage V CE(sat) 100 1 nA V V EB=10V, I C=0 I C=10mA, I B=0.01mA V BE(on) 1.4 V I C=10mA, V CE=5V* Static Forward Current h FE Transfer Ratio 20K I C=10mA, V CE=5V* *Measured under pulsed conditions. Pulse width =300s. Duty cycle 2% 3-77 |
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