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| PD-97258 POWER MOSFET SURFACE MOUNT (D3 PAK) Product Summary Part Number IRFMJ044 IRFMJ044 60V, N-CHANNEL HEXFET MOSFET TECHNOLOGY (R) RDS(on) 0.04 ID 35A* HEXFET(R) MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance. D3 PAK Features: n n n n n n n Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight Screened to JANTX Level per MIL-PRF-19500 Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25C ID @ VGS = 10V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Weight 35* 28 140 125 1.0 20 340 35 12.5 4.5 -55 to 150 9.3 (Typical) Units A W W/C V mJ A mJ V/ns o C g *Current is limited by package For footnotes refer to the last page www.irf.com 1 09/13/06 IRFMJ044 Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 60 -- -- 2.0 17 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ Max Units -- 0.68 -- -- -- -- -- -- -- 0.04 0.05 4.0 -- 25 250 V V/C V S( ) A Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 10V, ID = 28A A VGS = 10V, ID = 35A VDS = VGS, ID = 250A VDS > 15V, IDS = 28A A VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =10V, ID = 35A VDS = 30V VDD = 30V, ID = 35A, VGS =10V, RG = 9.1 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf Ciss C oss C rss Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance -- 100 -- -100 -- 88 -- 15 -- 52 -- 23 -- 130 -- 81 -- 79 2400 -- 1100 -- 230 -- nA nC ns pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD trr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units -- -- -- -- -- -- -- -- -- -- 35* 140 2.5 220 1.6 Test Conditions A V ns C Tj = 25C, IS = 35A, VGS = 0V A Tj = 25C, IF = 35A, di/dt 100A/s VDD 50V A Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. *Current is limited by package Thermal Resistance Parameter RthJC RthJCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units -- -- -- -- 0.21 -- 1.0 -- 48 C/W Test Conditions Typical socket mount For footnotes refer to the last page 2 www.irf.com IRFMJ044 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFMJ044 13a & b Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFMJ044 V DS VGS RG 10V Pulse Width 1 s Duty Factor 0.1 % RD D.U.T. + -V DD Fig 10a. Switching Time Test Circuit VDS 90% Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFMJ044 15V VDS L DRIVER RG D.U.T. IAS tp + - VDD A 1 20V 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V 0 .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRFMJ044 Footnotes: A Repetitive Rating; Pulse width limited by A ISD 35A, di/dt 100A/s, A Pulse width 300 s; Duty Cycle 2% VDD 60V, TJ 150C maximum junction temperature. A VDD = 25V, starting TJ = 25C, L= 0.5mH Peak IL = 35A, VGS = 10V Case Outline and Dimensions -- D3 PAK PIN AS S IGNMENT S 1 = DRAIN 2 = S OURCE 3 = GAT E 1 2 3 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 09/2006 www.irf.com 7 |
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