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| Datasheet File OCR Text: |
| MOS FET FKV660 (under development) Absolute Maximum Ratings (Ta=25C) Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg Ratings 60 20 50 150 Unit V V A A W C C Electrical Characteristics Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr td (off) tf VSD Test Conditions ID = 100A, VGS = 0V VGS = +20V VGS = -20V VDS = 60V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 25A VGS = 10V, ID = 25A VDS = 10V f = 1.0MHz VGS = 0V ID = 25A VDD 12V RL = 0.48 VGS = 10V ISD = 50A, VGS = 0V min 60 +10 -5 100 2.0 11 2000 900 100 To be defined 1.0 1.5 14 Ratings typ max (Ta=25C) Unit V A A V S m pF pF pF ns ns ns ns V External Dimensions FM20 (full-mold) 3.30.2 10.00.2 4.20.2 2.8 C 0.5 13.0 min 3.9 40 (Tc=25C) 150 -55 to +150 * PW 100s, duty 1% 1.0 20.0 16.90.3 8.40.2 0.8 4.00.2 0.2 a b 0.2 1.350.15 1.350.15 0.85 -0.1 +0.2 2.54 2.54 0.45 -0.1 +0.2 2.40.2 2.2 0.2 GDS a) Type No. b) Lot No. (Unit: mm) 77 |
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