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| FDR844P October 2001 FDR844P P-Channel 1.8V Specified PowerTrench MOSFET General Description This P-Channel 1.8V specified MOSFET uses Fairchild's advanced low voltage PowerTrench process. It has been optimized for battery power management applications. Features * -10 A, -20 V. RDS(ON) = 11 m RDS(ON) = 14 m RDS(ON) = 20 m * Fast switching speed * High performance trench technology for extremely low RDS(ON) * High power and current handling capability @ VGS = -4.5 V @ VGS = -2.5 V @VGS = -1.8 V Applications * Power management * Load switch * Battery protection D S D S 5 6 4 3 2 1 SuperSOT -8 TM D D D G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings -20 8 (Note 1a) Units V V A W -10 -50 1.8 1.0 0.9 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 70 20 C/W C/W Package Marking and Ordering Information Device Marking .844P Device FDR844P Reel Size 13'' Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDR844P Rev A1(W) FDR844P Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -16V, VGS = 8 V, VGS = -8 V, VGS = 0 V VDS = 0 V VDS = 0 V Min -20 Typ Max Units V Off Characteristics -13 -1 100 -100 mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -10 A ID = -9 A VGS = -2.5 V, ID = -7.5 A VGS = -1.8 V, VGS= -4.5 V, ID = -10 A, TJ=125C VGS = -4.5 V, VDS = -5 V VDS = -10 V, ID = -10 A -0.4 -0.7 3 7 9.5 13 9.5 -1.5 V mV/C 11 14 20 15 m ID(on) gFS On-State Drain Current Forward Transconductance -50 57 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, f = 1.0 MHz V GS = 0 V, 4951 884 451 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, VGS = -4.5 V, ID = -1 A, RGEN = 6 16 9 196 78 29 18 314 125 74 ns ns ns ns nC nC nC VDS = -10 V, VGS = -4.5 V ID = -10 A, 53 6 12 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -1.5 A Voltage -1.5 (Note 2) A V -0.56 -1.2 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 70C/W when mounted on a 1in2 pad of 2 oz copper b) 125C/W when 2 mounted on a .04 in pad of 2 oz copper c) 135C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDR844P Rev A1(W) FDR844P Typical Characteristics 50 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V -3.0V -ID, DRAIN CURRENT (A) 40 2.2 -2.5V 2 -2.0V 30 -1.5V VGS = - 1.5V 1.8 1.6 1.4 1.2 1 0.8 20 -2.0V -2.5V -3.0V -3.5V -4.5V 10 0 0 0.5 1 1.5 2 -VDS, DRAIN TO SOURCE VOLTAGE (V) 0 10 20 30 40 50 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.035 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) ID = -10A VGS = - 4.5V 1.4 ID = -5A 0.03 0.025 0.02 1.2 1 TA = 125oC 0.015 0.01 0.8 TA = 25oC 0.005 0 1 2 3 4 5 0.6 -50 -25 0 25 50 75 100 o 125 150 175 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 50 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 TA = -55oC 25oC 125oC -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 40 VGS = 0V 1 TA = 125oC 0.1 25oC -55oC 0.001 30 20 0.01 10 0 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDR844P Rev A1(W) FDR844P Typical Characteristics 5 -VGS , GATE-SOURCE VOLTAGE (V) 6000 ID = -10A VDS = -5V -10V CAPACITANCE (pF) CISS 5000 4000 3000 2000 1000 f = 1 MHz VGS = 0 V 4 -15V 3 2 COSS 1 0 0 10 20 30 40 50 60 Qg, GATE CHARGE (nC) CRSS 0 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 50 10s 100s -ID, DRAIN CURRENT (A) 10 10ms POWER (W) 100ms 1 VGS = -4.5V SINGLE PULSE RJA =135oC/W TA = 25oC 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 30 1ms 40 Figure 8. Capacitance Characteristics. RDS(ON) LIMIT SINGLE PULSE RJA =135oC/W TA = 25oC 20 0.1 10 0 0.001 0.01 0.1 1 10 100 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 135 C/W 0.1 0.05 0.02 0.01 0.1 P(pk) t1 t TJ - TA =2 P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDR844P Rev A1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R) SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R) VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4 |
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