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I27139- 01/03
FC40SA50FK
Applications ! Switch Mode Power Supply (SMPS) ! Uninterruptible Power Supply ! High Speed Power Switching ! Hard Switched and High Frequency Circuits Benefits ! Low Gate Charge Qg results in Simple Drive Requirement ! Improved Gate, Avalanche and Dynamic dv/dt Ruggedness ! Fully Characterized Capacitance and Avalanche Voltage and Current ! Low RDS(on) ! Fully Insulated Package Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current " Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt # Operating Junction and Storage Temperature Range
HEXFET(R) Power MOSFET
VDSS
500V
RDS(on) typ.
0.084
ID
40A
SOT-227
Max.
40 26 160 430 3.45 30 9.0 -55 to + 150
Units
A W W/C V V/ns C
Avalanche Characteristics
Symbol
EAS IAR EAR
Parameter
Single Pulse Avalanche Energy$ Avalanche Current" Repetitive Avalanche Energy"
Typ.
- - -
Max.
1240 40 43
Units
mJ A mJ
Thermal Resistance
Symbol
RJC RCS
Parameter
Junction-to-Case Case-to-Sink, Flat, Greased Surface
Typ.
- 0.05
Max.
0.29 -
Units
C/W
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1
I27139- 01/03
FC40SA50FK
Static @ TJ = 25C (unless otherwise specified)
Symbol V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) IDSS IGSS
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units Conditions 500 - - V VGS = 0V, ID = 250A - 0.60 - V/C Reference to 25C, ID = 1mA( - 0.084 0.10 VGS = 10V, ID = 24A % 3.0 - 5.0 V VDS = VGS, ID = 250A - - 50 VDS = 500V, VGS = 0V A - - 250 VDS = 400V, VGS = 0V, TJ = 125C - - 250 VGS = 30V nA - - -250 VGS = -30V Min. Typ. Max. Units Conditions 23 - - S VDS = 50V, ID = 28A - - 270 ID = 40A - - 84 nC VDS = 400V - - 130 VGS = 10V, See Fig. 6 and 13 % - 25 - VDD = 250V - 140 - ID = 40A ns - 55 - RG = 1.0 - 74 - VGS = 10V,See Fig. 10 % - 8310 - VGS = 0V - 960 - VDS = 25V - 120 - pF = 1.0MHz, See Fig. 5 - 10170 - VGS = 0V, VDS = 1.0V, = 1.0MHz - 240 - VGS = 0V, VDS = 480V, = 1.0MHz - 440 - VGS = 0V, VDS = 0V to 480V ' Min. Typ. Max. Units Conditions - - 40 MOSFET symbol showing the A - - 160 integral reverse p-n junction diode. - - - - 620 14 38 1 940 21 V ns C A TJ = 25C, IF = 47A di/dt = 100A/s % TJ = 25C
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Symbol IS
ISM
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) " Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Diode Characteristics
D
G S
VSD trr Qrr IRRM ton Notes:
TJ = 25C, IS = 40A, VGS = 0V %
-
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
" Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
% Pulse width 300s; duty cycle 2%. ' Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
$ Starting TJ = 25C, L = 1.55mH, RG = 25,
IAS = 40A, dv/dt =5.5V/ns (See Figure 12a)
# ISD 40A, di/dt 150A/s, VDD V(BR)DSS,
TJ 150C
2
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I27139- 01/03
FC40SA50FK
1000
V GS
15 10 8. 0 7. 0 6. 0 5. 5 B O TTO M 5. 0 TO P
1000
VGS 15 10 8. 0 7. 0 6. 0 5. 5 5. 0 B O TTO M 4. 5 TO P
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
10
10
1
5V
0.1
20 s PULSE WIDTH TJ=25C
1
4.5 V 20 s PULSE WIDTH T 150C
0.01 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
0.1 0.1 1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
3.5
100
RDS(on), Drain-to-Source On Resistance (Normalized)
3.0
ID=24A
ID, Drain-to-Source Current (A)
TJ =150C
2.5
2.0
10
1.5
TJ =25C 1 V DS =20V 20s PULSE WIDTH 0.1 4 5 6 7 8 9 10 11 12
1.0
V GS =10V
0.5
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (C)
V GS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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I27139- 01/03
FC40SA50FK
100000
VGS Ciss C rss Coss = 0V, f = 1 MHZ = Cgs + C gd, Cds SHORTED =C gd = Cds + C gd
20 ID =40A
VGS, Gate-to-Source Voltage (V)
10000
C, Capacitance(pF)
Ciss
15
1000
10
Coss
100
5
Crss
10 1 10 100 1000
0 0 100 200 300
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY RDS(on)
ISD, Reverse Drain Current (A)
100
ID, Drain Current (A) 100
TJ=150C 10 TJ=25C 1
100us 10 TC = 25C TJ = 150C Single Pulse 1 1ms 10ms
VGS=0 0.1 0.2 0.7 1.2 1.7 VSD, Source-to-Drain Voltage (V)
10
100 V DS, Drain-to-Source Voltage (V)
1000
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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I27139- 01/03
FC40SA50FK
40
VGS VDS RD
D.U.T.
+
ID, Drain Current (A)
30
RG
-VDD
10V
20
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
10
VDS 90%
0 25 50 75 100 125 150
10% VGS
td(on) tr t d(off) tf
TC, Case Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10b. Switching Time Waveforms
1.000
Thermal Response ( ZthJC
0.100
D = 0.50 0.30 0.10
J R1 R1 J 1 2 R2 R2 R3 R3 C 2 3 3
Ri (C/W) 0.161 0.210 0.147
i (sec) 0.000759 0.017991 0.06094
0.010
0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
1
Ci= i/Ri Ci i/Ri
Notes: 1. Duty factor D = t1/t2 2. Peak TJ=PDM x ZthJC + TC 0.01 0.1 1
0.001 0.00001
0.0001
0.001
t1, Rectangular Pulse Duration (s)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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I27139- 01/03
FC40SA50FK
3000 EAS, Single Pulse Avalanche Energy (mJ)
TOP
2500
BOTTOM
ID ... 18A 26A 40A
15V
2000
VDS L
DRIVER
1500 1000
RG
20V
D.U.T
IAS tp
+ V - DD
A
500 0 25 50 75 100 125 150 S tarting TJ, Junction Tem perature (C)
0.01
Fig 12c. Unclamped Inductive Test Circuit
Fig 12a. Maximum Avalanche Energy Vs. Drain Current
V(BR)DSS tp
I AS
Fig 12d. Unclamped Inductive Waveforms
R
L
+ D.U .T. VG S V DS -
QG
VGS V
QGS QGD
1m A
ID
VG
Charge
Fig 13a. Gate Charge Test Circuit
Fig 13b. Basic Gate Charge Waveform
6
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I27139- 01/03
FC40SA50FK
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
#
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
$
-
%
+
"
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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I27139- 01/03
FC40SA50FK
SOT-227 Package Details
4.40 (.173 ) 4.20 (.165 ) 4 38.30 ( 1.508 ) 37.80 ( 1.488 ) -A3 6.25 ( .246 ) 12.50 ( .492 ) 25.70 ( 1.012 ) 25.20 ( .992 ) -B1 7.50 ( .295 ) 30.20 ( 1.189 ) 29.80 ( 1.173 ) 4X 2.10 ( .082 ) 1.90 ( .075 ) 8.10 ( .319 ) 7.70 ( .303 ) 0.25 ( .010 ) M C A M B M 2.10 ( .082 ) 1.90 ( .075 ) -C0.12 ( .005 ) 12.30 ( .484 ) 11.80 ( .464 ) 2 R FULL 15.00 ( .590 ) EG IGBT A1 K2 4 Note : 1 3 2 CHAMFER 2.00 ( .079 ) X 457 LEAD ASSIGMENTS E C 4 1 S D 3 2 HEXFET
AUX-S G S HEXFET
AUX-S is a low current input K1 A2 intended for driving purpose only
HEXFRED
QUANTITY PER TUBE IS 10 M4 SREW AND WASHER INCLUDED
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/02
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