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| CHA5290 17.7-24GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5290 is a high gain four-stage monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. 34 30 26 22 18 14 10 6 2 -2 -6 -10 -14 -18 -22 -26 -30 14 16 18 20 Vd1 Vd2 Vd3 Vd4 Vg1,2 Vg3 Vg4 Vd4 Main Features Performances : 17.7 -24GHz 26dBm output power @ 1dB comp. gain 26 dB 1dB gain DC power consumption, 400mA @ 6V Chip size : 3.43 x 1.57 x 0.05 mm S11 (dB) 22 24 S21 (dB) 26 28 30 S22 (dB) 32 34 Frequency (GHz) Typical on jig Measurements Main Characteristics Tamb. = 25C Symbol Fop G P1dB Id Parameter Operating frequency range Small signal gain Output power at 1dB gain compression Bias current Min 17.7 Typ 26 26 400 Max 24 Unit GHz dB dBm mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. DSCHA52902295 -22-Oct.-02 1/6 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5290 Electrical Characteristics Tamb = +25C, Vd = 6V Id =400mA Symbol Fop G G Is P1dB P03 PAE VSWRin 18-24GHz Medium Power Amplifier Parameter Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation Pulsed output power at 1dB compression (1) Output power at 3dB gain compression (1) Power added efficiency at 1dB comp. Input VSWR (2) Min 17.7 24 Typ Max 24 Unit GHz dB dB dB dBm dBm % 26 1 40 25 26 27 18 3:1 3:1 165 400 500 VSWRout Output VSWR (2) Tj Id Junction temperature for 80C backside Bias current @ small signal C mA (1) These values are representative for pulsed on-wafer measurements that are made without bonding wires at the RF ports. (2) Value representative for CW on jig measurement. Absolute Maximum Ratings Tamb. = 25C (1) Symbol Vd Id Vg Ig Vgd Pin Tch Ta Tstg Parameter Maximum drain bias voltage with Pin max=-2dBm Maximum drain bias current Gate bias voltage Gate bias current Minimum negative gate drain voltage ( Vg - Vd) Maximum input power overdrive (2) Maximum channel temperature Operating temperature range Storage temperature range Values 6.25 625 -2.5 to +0.4 -2.5 to +2.5 -8 3 175 -40 to +80 -55 to +125 Unit V mA V mA V dBm C C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. DSCHA52902295 -22-Oct.-02 2/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 18-24GHz Medium Power Amplifier Typical on Jig Measurements Bias conditions: Vd=6V, Vg tuned for Id = 400mA Linear Gain & Return Losses versus frequency 34 30 26 22 18 14 10 6 2 -2 -6 -10 -14 -18 -22 -26 -30 14 16 18 20 CHA5290 S11 (dB) 22 24 S21 (dB) 26 28 30 S22 (dB) 32 34 Frequency (GHz) Linear Gain, Output power & associated PAE at 1dB compression versus frequency 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 16 17 P-1dB (dBm) Linear Gain (dB) PAE@ 1dB comp. 18 19 20 21 22 23 24 25 Frequency (GHz) Ref. DSCHA52902295 -22-Oct.-02 3/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5290 52 50 48 46 44 C/I3 (dBc) 18-24GHz Medium Power Amplifier C/I3 versus total output power (F =10MHz) 42 40 38 36 34 32 30 28 26 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Pout (dBm) 17.5GHz 21.5GHz 19.5GHz 23.6GHz Ref. DSCHA52902295 -22-Oct.-02 4/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 18-24GHz Medium Power Amplifier Chip Assembly and Mechanical Data To Vd1,2,3 DC Drain supply feed 10nF CHA5290 To Vd4 DC Drain supply feed 10nF 120pF 120pF 120pF 120pF 120pF 120pF 120pF 120pF 10nF To Vg1,2,3,4 DC Gate supply Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is to be prefered. Bonding pad positions. ( Chip thickness : 50m. All dimensions are in micrometers ) Ref. DSCHA52902295 -22-Oct.-02 5/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA5290 Application note Bias operation sequence: ON: Supply Gate voltage Supply Drain voltage OFF: Cut off Drain voltage Cut off Gate voltage 18-24GHz Medium Power Amplifier Due to 50m thickness, specific care is requested for the handling and assembly. Ordering Information Chip form : CHA5290-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. DSCHA52902295 -22-Oct.-02 6/6 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
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