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| BYV37.BYV38 Vishay Telefunken Fast Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Applications Fast "soft recovery" rectifier 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g Peak forward surge current Average forward current Junction and storage temperature range Test Conditions Type BYV37 BYV38 Symbol VR VR IFSM IFAV Tj=Tstg Value 800 1000 50 2 -65...+175 Unit V V A A C tp=10ms, half sinewave Tamb=40C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=10mm, TL=constant on PC board with spacing 25mm Symbol RthJA RthJA Value 45 100 Unit K/W K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Reverse recovery time Diode Capacitance Test Conditions IF=1A Tj=150C IF=0.5A, IR=1A, iR=0.25A VR=4V, f=1MHz Type Symbol VF IR IR trr CD Min Typ 1.0 Max 1.1 5 150 300 Unit V mA mA ns pF 15 Document Number 86045 Rev. 2, 24-Jun-98 www.vishay.de * FaxBack +1-408-970-5600 1 (4) BYV37.BYV38 Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified) R thJA - Therm. Resist. Junction / Ambient ( K/W ) 120 100 80 60 l 40 20 0 0 5 10 15 TL=constant 20 25 30 15773 2.5 I FAV- Average Forward Current ( A ) VR = VR RM half sinewave 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature ( C ) RthJA=45K/W l=10mm l RthJA=100K/W PCB: d=25mm 94 9552 l - Lead Length ( mm ) Figure 1. Max. Thermal Resistance vs. Lead Length Figure 4. Max. Average Forward Current vs. Ambient Temperature 10 500 PR - Reverse Power Dissipation ( mW ) 450 400 350 300 250 200 150 100 50 0 25 15774 VR = VRRM IF - Forward Current ( A ) RthJA= 45K/W 100K/W 160K/W Tj = 175C 1 Tj = 25C 0.1 0.01 BYV38 BYV37 50 75 100 125 150 175 0.001 0.0001 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) Tj - Junction Temperature ( C ) 15772 Figure 2. Max. Reverse Power Dissipation vs. Junction Temperature 1000 VR = VRRM Figure 5. Max. Forward Current vs. Forward Voltage 35 CD - Diode Capacitance ( pF ) 30 25 20 15 10 5 0 0.1 15776 f=1MHz I R - Reverse Current ( mA ) 100 10 1 25 15775 50 75 100 125 150 175 1.0 10.0 100.0 Tj - Junction Temperature ( C ) VR - Reverse Voltage ( V ) Figure 3. Max. Reverse Current vs. Junction Temperature Figure 6. Typ. Diode Capacitance vs. Reverse Voltage www.vishay.de * FaxBack +1-408-970-5600 2 (4) Document Number 86045 Rev. 2, 24-Jun-98 BYV37.BYV38 Vishay Telefunken Dimensions in mm 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5 g Cathode Identification technical drawings according to DIN specifications 94 9538 0.82 max. 26 min. 4.2 max. 26 min. Document Number 86045 Rev. 2, 24-Jun-98 www.vishay.de * FaxBack +1-408-970-5600 3 (4) BYV37.BYV38 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 4 (4) Document Number 86045 Rev. 2, 24-Jun-98 |
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