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CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor
Spec. No. : C306S3 Issued Date : 2002.05.11
Revised Date : 2002.11.26 Page No. : 1/4
BTA1576S3
Description
* The BTA1576S3 is designed for using in driver stage of AF amplifier and general purpose amplification. * Excellent hFE linearity * Complementary to BTC4081S3.
Symbol
BTA1576S3
Outline
SOT-323
BBase CCollector EEmitter
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -60 -50 -6 -150 225 150 -55~+150 Unit V V V mA mW C C
BTA1576S3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min. -60 -50 -6 120 60 Typ. -0.2 140 4.0 Max. -0.1 -0.1 -0.5 820 5.0 Unit V V V uA uA V MHz pF
Spec. No. : C306S3 Issued Date : 2002.05.11
Revised Date : 2002.11.26 Page No. : 2/4
Test Conditions IC=-50uA IC=-1mA IE=-50uA VCB=-60V VEB=-6V IC=-50mA, IB=-5mA VCE=-6V, IC=-1mA VCE=-12V, IC=-2mA, f=30MHz VCB=-12V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Classification Of hFE
Rank Range Q 120-270 R 180-390 S 270-560 T 410-820
BTA1576S3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current 1000 Saturation Voltage---(mV) HFE@VCE=6V Current Gain---HFE 1000
Spec. No. : C306S3 Issued Date : 2002.05.11
Revised Date : 2002.11.26 Page No. : 3/4
Saturation Voltage vs Collector Current
VCE(SAT)@IC=10IB
100
100
10 0.1 1 10 100 1000 Collector Current---IC(mA)
10 0.1 1 10 100 1000 Collector Current---IC(mA)
Saturation Voltage vs Collector Current 1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1
Cutoff Frequency vs Collector Current
VBE(SAT)@IC=10IB
FT@VCE=12V
100 0.1 1 10 100 1000 Collector Current---IC(mA)
0.1 1 10 Collector Current---IC(mA) 100
Power Derating Curve 250 Power Dissipation---PD(mW) 200 150 100 50 0 0 50 100 150 200 Ambient Temperature --- Ta( )
BTA1576S3 CYStek Product Specification
CYStech Electronics Corp.
SOT-323 Dimension
Spec. No. : C306S3 Issued Date : 2002.05.11 Revised Date : 2002.11.26 Page No. : 4/4
3
A
Marking:
A1 Q Lp
detail Z W B
C
1 e1 e D bp
2
TE A4
E
A
Z
He
0 1 scale 2 mm
3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3
v A
Style: Pin 1.Base 2.Emitter 3.Collector
*: Typical
DIM A A1 bp C D E e
Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 -
Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 -
DIM e1 He Lp Q v w
Inches Min. Max. 0.0256 0.0787 0.0886 0.0059 0.0177 0.0051 0.0091 0.0079 0.0079 -
Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10 0
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1576S3
CYStek Product Specification

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