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SRFET
TM
AO4720 N-Channel Enhancement Mode Field Effect Transistor
TM
General Description
SRFET The AO4720 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Standard Product AO4720 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V ID =13A (VGS = 10V) RDS(ON) < 11m (VGS = 10V) RDS(ON) < 17.5m (VGS = 4.5V)
UIS TESTED! Rg,Ciss,Coss,Crss Tested
D S S S G D D D D
G S
SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode
Absolute Maximum Ratings TA=25C unless otherwise noted Max Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain TA=25C AF Current TA=70C B Pulsed Drain Current Avalanche Current
C
Symbol VDS VGS
10 Sec
Steady State
30 20 13 10 7.8 120 21 66 3.1 2.0 -55 to 150 1.7 1.1 10.5
Units V V A A A mJ W C
IDSM IDM IAR EAR PDSM TJ, TSTG
Repetitive avalanche energy L=0.3mH C TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter
Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C
A A
Symbol
t 10s Steady-State Steady-State
RJA RJL
Typ 32 60 17
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4720
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=11A Forward Transconductance VDS=5V, ID=13A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Conditions ID=250uA, VGS=0V VDS=30V, VGS=0V TJ=125C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=13A TJ=125C 1.3 120 9.3 13.8 14 37 0.40 0.5 5 1267 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 308 118 1.3 21 VGS=10V, VDS=15V, ID=13A 10.4 3.0 3.6 5.2 VGS=10V, VDS=15V, RL=1.2, RGEN=3 IF=13A, dI/dt=300A/s 3.8 21.2 4.4 11.2 10.5 17 2.0 30 14 1600 11.0 17.3 17.5 1.62 Min 30 0.1 20 0.1 2 Typ Max Units V mA A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=13A, dI/dt=300A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The power dissipation and current rating is based on the t 10s junction to ambient thermal resistance rating. Rev1: May. 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4720
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120 10V 100 80 ID (A) 60 40 20 VGS=3.5V 0 0 1 2 3 4 5 VDS (Volts) PARAMETERS Figure 1: On-Region Characteristics 1.8 Normalized On-Resistance VGS=10V 1.6 ID=13A 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 7V 5V ID(A) 4.5V 4V 6V 30 25 20 15 10 5 125 25C VDS=5V
DYNAMIC
18 16
VGS=4.5V RDS(ON) (m) 14 12 10 8 6 0 5 10 15 20 25 30 VGS=10V
1.4 VGS=4.5V 1.2 ID=11A
1
0.8 0 30 60 90 120 150 180 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
30 ID=13A 25
1.0E+02 1.0E+01 1.0E+00 125C
RDS(ON) (m)
125C
IS (A)
20
1.0E-01 1.0E-02 1.0E-03
25C
15
10 25C 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4720
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 6 4 2 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics Capacitance (pF) VGS (Volts) VDS=15V ID=13A 2000 1600 1200 800 400 Crss 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss
Ciss
DYNAMIC PARAMETERS
1000.0 100.0 ID (Amps) 10.0 1ms 1.0 0.1 0.0 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 TJ(Max)=150C TA=25C DC
100 80 Power (W) 60 40 20 0 0.0001 TJ(Max)=150C TA=25C
RDS(ON) limited
10s 100 10ms 1s 10s
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1 D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=75C/W 0.001 0.01 0.1 1 PD Ton T 100 1000
0.01 Single Pulse 0.001 0.00001
0.0001
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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