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AO4617 Complementary Enhancement Mode Field Effect Transistor
General Description
The AO4617 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AO4617 is Pb-free (meets ROHS & Sony 259 specifications). AO4617L is a Green Product ordering option. AO4617 and AO4617L are electrically identical.
Features
n-channel VDS (V) = 40V ID = 6A (VGS=10V) RDS(ON) < 32m (VGS=10V) < 45m (VGS=4.5V) p-channel -40V -5A (VGS = -10V) RDS(ON) < 48m (VGS = -10V) < 75m (VGS = -4.5V)
ESD rating: 3000V (HBM) UIS TESTED! Rg,Ciss,Coss,Crss Tested
D2 D1
S2 G2 S1 G1
1 2 3 4
8 7 6 5
D2 D2 D1 D1
G2
G1
SOIC-8 n-channel
S2
S1
p-channel Max p-channel -40 20 -5 -4 -25 2 1.28 17 43 -55 to 150 W A mJ C A Units V V
Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Max n-channel VDS Drain-Source Voltage 40 VGS Gate-Source Voltage 20 Continuous Drain Current A Pulsed Drain Current Power Dissipation B Avalanche Current
B
TA=25C TA=70C TA=25C TA=70C
B
6 ID IDM PD IAR EAR TJ, TSTG 5 30 2 1.28 13 25 -55 to 150
Repetitive avalanche energy 0.3mH
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead
Symbol RJA RJL RJA RJL
Device n-ch n-ch n-ch p-ch p-ch p-ch
Typ 48 74 35 48 74 35
Max 62.5 110 50
Units C/W C/W C/W
62.5 C/W 110 C/W 50 C/W
Alpha & Omega Semiconductor, Ltd.
AO4617
N Channel Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=32V, VGS=0V TJ=55C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, I D=6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, I D=5A Forward Transconductance VDS=5V, ID=6A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current TJ=125C 1 30 26 39 36 18 0.76 1 3 506 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 106 38 2.6 8.4 VGS=10V, VDS=20V, I D=6A 4.1 1.6 2.7 4.8 VGS=10V, VDS=20V, RL=3.3, RGEN=3 IF=6A, dI/dt=100A/s IF=6A, dI/dt=100A/s 2 17 2.1 17.4 10.9 3.9 32 48 45 2.2 Min 40 1 5 1 3 Typ Max Units V A mA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 0 : October 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4617
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30 10V 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics VGS=3.5V 5 -40C 0 2 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics 1.8 Normalized On-Resistance 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=10V ID=6A 25C 4V ID(A) 10 125C 5V 4.5V 15 20 VDS=5V
50
RDS(ON) (m)
40
VGS=4.5V
VGS=4.5V ID=5A
30
VGS=10V
20 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
70 60 RDS(ON) (m) 50 40 30 20 25C 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage IS (A) 125C ID=6A
1.0E+01 1.0E+00 1.0E-01 1.0E-02 25C 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics -40C 125C
Alpha & Omega Semiconductor, Ltd.
AO4617
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=30V ID= 6A Capacitance (pF) 800
600
Ciss
400 Coss 200 Crss
0 0 10 20 30 40 VDS (Volts) Figure 8: Capacitance Characteristics
100.00 TJ(Max)=150C TA=25C 10.00 ID (Amps) 10m 1.00 RDS(ON) limited 10s 0.1s DC 100s 1ms 10s Power (W)
40
TJ(Max)=150C TA=25C
30
20
0.10
10
0.01 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T 10 100 1000
0.01 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4617
P-Channel Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=-32V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, I D=-5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, I D=-4A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1 -25 40 56 61 11 -0.76 -1 3.5 1006 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 152 77 11 17.4 VGS=-10V, VDS=-20V, I D=-5A 8.9 3.1 4.6 9.7 VGS=-10V, VDS=-20V, RL=4, RGEN=3 IF=-5A, dI/dt=100A/s IF=-5A, dI/dt=100A/s 6.3 35.5 26 21.8 15.5 48 68 75 -2 Min -40 -1 -5 150 -3 Typ Max Units V A A V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the 10s thermal resistance rating. given application depends on the user's specific board design. The current rating is based on the t t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s s pulses, duty cycle 0.5% max. <300 pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA T A=25C. The SOA curve provides curve provides a single pulse rating. a single pulse rating. Rev 0 : October 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4617
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30 25 20 -ID (A) 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics -3.5V -ID(A) -4V 15 10 5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 -VGS(Volts) Figure 2: Transfer Characteristics 1.8 VGS=-4.5V Normalized On-Resistance 1.6 1.4 1.2 1 0.8 0.6 0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 175 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 ID=-5A 80 RDS(ON) (m) 125C 60 -IS (A) 1.0E-01 1.0E-02 25C 1.0E-03 1.0E-04 -40C 20 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=-4.5V ID=-4A VGS=-10V ID=-5A 25C -10V -6V -5V -4.5V 25 VDS=-5V 20 125C -40C
VGS=-3V
80 70 RDS(ON) (m) 60 50 VGS=-10V 40 30
1.0E+01 1.0E+00 125C
40
25C
Alpha & Omega Semiconductor, Ltd.
AO4617
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10 8 -VGS (Volts) 6 4 2 0 0 5 10 15 20 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-30V ID=-5A Capacitance (pF) 1400 1200 1000 800 600 400 200 0 0 10 20 30 40 -VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss Ciss
100.00 TJ(Max)=150C, TA=25C 10.00 -ID (Amps) 1ms 1.00 RDS(ON) limited 1s 0.10 10s DC 0.1s 10ms 10s 100s Power (W)
40
TJ(Max)=150C TA=25C
30
20
10
0.01 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
PD 0.1 Ton Single Pulse 0.01 0.00001 T
0.0001
0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
0.001
0.01
100
1000
Alpha & Omega Semiconductor, Ltd.

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