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| VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 3000 1285 2019 15x103 0.933 0.242 V A A A V m Rectifier Diode 5SDD 11D2800 Doc. No. 5SYA1166-00 Okt. 03 * Very low on-state losses * Optimum power handling capability Blocking Maximum rated values 1) Parameter Repetetive peak reverse voltage Symbol Conditions VRRM f = 50 Hz, tp = 10ms, Tj = -40...160C f = 5 Hz, tp = 10ms, Tj = -40...160C Value 2800 3000 Unit V V Non - repetetive peak reverse voltage VRSM Characteristic values Parameter Max. (reverse) leakage current Symbol Conditions IRRM VRRM, Tj = 160C min typ max 30 Unit mA Mechanical data Maximum rated values 1) Parameter Mounting force Acceleration Acceleration Characteristic values Symbol Conditions FM a a Device unclamped Device clamped min 8 typ 10 max 12 50 100 Unit kN m/s m/s 2 2 Parameter Weight Housing thickness Surface creepage distance Symbol Conditions m H DS FM = 10 kN, Ta = 25 C min 25.5 33 typ 0.3 max 26.5 Unit kg mm mm mm Air strike distance Da 18 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SDD 11D2800 On-state Maximum rated values 1) Parameter Max. average on-state current Max. RMS on-state current Max. peak non-repetitive surge current Limiting load integral Max. peak non-repetitive surge current Limiting load integral Symbol Conditions IF(AV)M IF(RMS) IFSM I2t IFSM I2t tp = 8.3 ms, Tj = 160C, VR = 0 V tp = 10 ms, Tj = 160C, VR = 0 V 50 Hz, Half sine wave, TC = 85 C min typ max 1285 2019 15x10 1.125x10 16x10 1.066x10 3 Unit A A A A2s A A2s 6 3 6 Characteristic values Parameter On-state voltage Threshold voltage Slope resistance Symbol Conditions VF V(T0) rT IF = 1500 A, Tj = 160C Tj = 160C IT = 1500...4500 A min typ max 1.3 0.933 0.242 Unit V V m Switching Characteristic values Parameter Symbol Conditions Qrr diF/dt = -30 A/s, VR = 100 V min typ 2200 max 3000 Unit As Recovery charge IFRM = 1000 A, Tj = 160C ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1166-00 Okt. 03 page 2 of 6 5SDD 11D2800 Thermal Maximum rated values 1) Parameter Operating junction temperature range Characteristic values Symbol Conditions Tvj min -40 -40 min typ max 160 175 Unit C C Unit K/kW K/kW K/kW K/kW K/kW Storage temperature range Tstg Parameter Symbol Conditions Double-side cooled Fm = 8...12 kN Anode-side cooled Fm = 8...12 kN Cathode-side cooled Fm = 8...12 kN Double-side cooled Fm = 8...12 kN Single-side cooled Fm = 8...12 kN typ max 32 50 88 8 16 Thermal resistance junction Rth(j-c) to case Rth(j-c)A Rth(j-c)C Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: Zth(j-c) (t) = R th i (1 - e-t/ i ) i =1 i Rth i(K/kW) i(s) 1 11.600 0.7033 2 10.110 0.2185 3 7.870 0.0588 4 2.410 0.0042 Fig. 1 Transient thermal impedance junction-tocase. n ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1166-00 Okt. 03 page 3 of 6 5SDD 11D2800 IF ( A ) 9000 25 C 160 C 8000 7000 6000 5000 4000 3000 2000 1000 0 0 1 2 VF (V) 3 IFSM ( kA ) 30 I FSM 25C 25 160C 20 i dt 25C 2 3 i 2dt (106 A2s) 2,5 2 15 160 C 1,5 10 1 5 0,5 0 1 10 t ( ms ) 0 100 Fig. 2 Max. on-state characteristics. PT ( W ) 2500 Fig. 3 Surge forward current vs. pulse length. Half sine wave, single pulse, VR = 0 V 120 180 PT ( W ) 2500 60 = 30 2000 DC 2000 60 90 120 180 270 DC 1500 1500 1000 1000 500 500 0 0 400 800 1200 1600 0 0 500 1000 1500 I FAV ( A ) I FAV ( A ) Fig. 4 Forward power loss vs. average forward current, sine waveform, f = 50 Hz Fig. 5 Forward power loss vs. average forward current, square waveform, f = 50 Hz ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1166-00 Okt. 03 page 4 of 6 5SDD 11D2800 TC ( C ) TC ( C ) 170 160 150 140 130 120 110 100 90 80 70 60 0 400 800 170 160 150 140 130 120 110 100 DC 90 80 70 DC 270 180 = 30 0 400 800 60 1200 120180 1600 60 60 90 120 1200 1600 I FAV ( A ) I FAV ( A ) Fig. 6 Max. case temperature vs aver. forward current, sine waveform, f = 50 Hz 10000 Qrr ( C ) Fig. 7 Max. case temperature vs aver. forward current, square waveform, f = 50 Hz 1000 IrrM ( A ) 100 1000 max max min min 100 1 10 dI F /dt ( A/s ) 100 10 1 10 dI F /dt ( A/s ) 100 Fig. 8 Reverse recovery charge vs. dIF/dt, IF= 1000 A; Tj = Tjmax, limit values Fig. 9 Peak reverse recovery current vs. diF/dt, IF = 1000 A; Tj = Tjmax, limit values ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1166-00 Okt. 03 page 5 of 6 5SDD 11D2800 Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. Related application notes: Doc. Nr 5SYA 2020 5SYA 2029 5SYA 2036 Titel Design of RC-Snubbers for Phase Control Applications Designing Large Rectifiers with High Power Diodes Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1166-00 Okt. 03 |
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