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| AP12L02H/J Advanced Power Electronics Corp. Simple Drive Requirement Low Gate Charge Fast Switching G S D N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 85m 12A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP12L02J) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=100 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 25 20 12 9 22 20 0.16 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 6.2 110 Unit /W /W Data and specifications subject to change without notice 200110031 AP12L02H/J Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min. 25 1 - Typ. 0.024 Max. Units 85 180 3 1 25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-Source On-Resistance VGS=10V, ID=6A VGS=4.5V, ID=4A VDS=VGS, ID=250uA VDS=10V, ID=6A 5.2 3.5 1 2.3 4.8 15.9 10.4 2.7 105 70 30 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=25V, VGS=0V VDS=20V ,VGS=0V VGS= 20V ID=6A VDS=20V VGS=5V VDS=15V ID=6A RG=3.3,VGS=10V RD=2.5 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS ISM VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V 1 Min. - Typ. - Max. Units 12 22 1.2 A A V Pulsed Source Current ( Body Diode ) Forward On Voltage 2 Tj=25, IS=12A, VGS=0V Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP12L02H/J 21 T C =25 o C 10V 8.0V 6.0V 18 T C =150 o C 10V 8.0V 6.0V ID , Drain Current (A) 14 ID , Drain Current (A) 12 5.0V 5.0V 6 7 V GS =4.5V V GS =4.5V 0 0.0 1.0 2.0 3.0 4.0 0 0.0 1.0 2.0 3.0 4.0 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 180 2 I D =6A T C =25 I D =6A V GS =10V 80 Normalized R DS(ON) 2 6 10 14 130 1.4 RDS(ON) (m ) 0.8 30 0.2 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP12L02H/J 16 30 12 ID , Drain Current (A) 20 8 PD (W) 10 0 4 0 25 50 75 100 125 150 0 50 100 150 T c , Case Temperature ( o C) T c , Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor = 0.5 Normalized Thermal Response (R thjc) 100us 10 0.2 ID (A) 1ms 0.1 0.1 0.05 PDM 0.02 1 10ms 100ms 1s T C =25 o C Single Pulse t 0.01 T Single Pulse Duty Factor = t/T Peak Tj = P DM x Rthjc + TC 0.1 0.1 1 10 100 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP12L02H/J 12 f=1.0MHz 1000 I D =6A VGS , Gate to Source Voltage (V) 9 V DS =12V V DS =16V V DS =20V C (pF) Ciss 100 6 Coss 3 Crss 0 0 2 4 6 8 10 1 8 15 22 29 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100 3 2.5 10 IS(A) Tj=150 o C Tj=25 o C VGS(th) (V) 2 1 1.5 0.1 0 0.5 1 1.5 1 -50 0 50 100 150 V SD (V) T j , Junction Temperature ( o C ) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP12L02H/J VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.6 x RATED VDS RG G + 10 V - S VGS 10% VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 5V D 0.8 x RATED VDS G S + QGS QGD VGS 1~ 3 mA IG I D Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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