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| SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR ISSUE 2 SEPTEMBER 1995 7 FLLD261 2 DIODE PIN CONNECTION 1 3 3 1 2 SOT23 PART MARKING DETAIL P8A ABSOLUTE MAXIMUM RATINGS. PARAMETER Repetitive Peak Reverse Voltage Average Rectified Forward Current Power Dissipation at Tamb = 25C Operating and Storage Temperature Range SYMBOL VRRM IF(AV) Ptot Tj:Tstg VALUE 100 250 3.0 330 -55 to +150 UNIT V mA A mW C Non-Repetitive Peak Forward Current (t=1s) IFSM ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Reverse Current Reverse Recovery Time* Forward Recovery Time Diode Capacitance SYMBOL IR trr tfr Cd MIN. MAX. 5 5 400 10 4 Typ 0.9 1.4 UNIT CONDITIONS. A nA VRRM=100V VRRM=100V, Tamb=150C IF= IR=50 400mA IF=10mA VR=1V, f=1MHz IF=10mA, Rise time=5ns 20% IF=-200mA ns ns pF V V Forward Overshoot Voltage Vfr Forward Voltage VF *Time for IR to recover to 10% of IR peak For typical characteristics graphs see FLLD263 datasheet. 3 - 97 FLLD258 FLLD261 FLLD263 TYPICAL CHARACTERISTICS 25 20 15 10 5 0 0 20 40 60 80 100 VF - Forward Voltage (V) IR v VF 3 - 99 |
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