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TYPICAL PERFORMANCE CURVES (R) APT35GN120B APT35GN120BG* APT35GN120B(G) 1200V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses. TO -2 47 G C E * * * * * 1200V NPT Field Stop Trench Gate: Low VCE(on) Easy Paralleling 10s Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current 1 All Ratings: TC = 25C unless otherwise specified. APT35GN120B(G) UNIT Volts 1200 30 94 46 105 105A @ 1200V 379 -55 to 150 300 Amps @ TC = 150C Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Watts C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 250A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units 1200 5 1.4 2 2 5.8 1.7 1.9 6.5 2.1 Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 35A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C) Volts I CES I GES RGINT 100 TBD 600 6 Gate-Emitter Leakage Current (VGE = 20V) Intergrated Gate Resistor nA CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 050-7601 Rev C 10-2005 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C) A DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA SCSOA td(on) td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT35GN120B(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 35A TJ = 150C, R G = 2.2 7, VGE = 15V, L = 100H,VCE = 1200V VCC = 960V, VGE = 15V, TJ = 125C, R G = 2.2 7 Inductive Switching (25C) VCC = 800V VGE = 15V I C = 35A VGE = 15V MIN TYP MAX UNIT pF V nC 2500 150 120 9.5 220 15 130 105 10 24 22 300 55 TBD 2395 2315 24 22 365 100 TBD 3745 3435 J ns ns A Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Short Circuit Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 4 5 s RG = 2.2 7 TJ = +25C Turn-on Switching Energy (Diode) 6 J Inductive Switching (125C) VCC = 800V VGE = 15V I C = 35A Turn-on Switching Energy (Diode) 66 TJ = +125C RG = 2.2 7 THERMAL AND MECHANICAL CHARACTERISTICS Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm .33 N/A 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 10-2005 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 RG is external gate resistance, not including RGint nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein. 050-7601 Rev C TYPICAL PERFORMANCE CURVES 120 100 80 60 120 APT35GN120B(G) 15V 15V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 12V 100 80 60 40 20 0 12V 11V 10V 9V 8V 7V 11V 10V 40 9V 20 0 8V 100 FIGURE 1, Output Characteristics(TJ = 25C) 250s PULSE TEST<0.5 % DUTY CYCLE 7V 0 2 4 6 8 10 12 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10 FIGURE 2, Output Characteristics (TJ = 125C) I = 35A C T = 25C J 0 2 4 6 8 10 12 14 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 80 VCE = 240V VCE = 600V 60 TJ = 125C TJ = 25C 40 TJ = -55C 8 6 4 2 0 VCE = 960V 20 0 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 0 50 100 150 200 GATE CHARGE (nC) 250 FIGURE 4, Gate Charge 3 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 4 3.5 3 2.5 2 1.5 1.0 0.5 TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE IC = 70A 2.5 2 IC = 70A IC = 35A IC = 35A 1.5 1 0.5 IC = 17.5A IC = 17.5A 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.10 0 8 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 140 0 -50 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) 1.05 IC, DC COLLECTOR CURRENT(A) 120 100 80 60 40 20 10-2005 050-7601 Rev C Lead Temperature Limited 1.00 0.95 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature 0.90 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 30 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 25 VGE = 15V 450 350 300 250 200 150 100 50 0 VCE = 800V RG = 2.2 L = 100 H VGE =15V,TJ=25C APT35GN120B(G) VGE =15V,TJ=125C 20 15 10 5 T = 25C, T =125C J J 80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current VCE = 800V RG = 2.2 L = 100 H 0 80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 80 70 60 50 40 30 20 10 RG = 2.2, L = 100H, VCE = 800V 150 125 tf, FALL TIME (ns) RG = 2.2, L = 100H, VCE = 800V tr, RISE TIME (ns) 100 75 50 25 0 TJ = 125C, VGE = 15V TJ = 25 or 125C,VGE = 15V TJ = 25C, VGE = 15V 80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 0 80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 12000 EON2, TURN ON ENERGY LOSS (J) 10000 8000 6000 4000 2000 EOFF, TURN OFF ENERGY LOSS (J) V = 800V CE V = +15V GE R = 2.2 G 8000 7000 6000 5000 4000 3000 2000 1000 0 = 800V V CE = +15V V GE R = 2.2 G TJ = 125C,VGE =15V TJ = 125C, VGE = 15V TJ = 25C, VGE = 15V TJ = 25C,VGE =15V 80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 0 80 70 60 50 40 30 20 10 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 25000 SWITCHING ENERGY LOSSES (J) J SWITCHING ENERGY LOSSES (J) = 800V V CE = +15V V GE T = 125C 12000 Eon2,70A 10000 8000 6000 4000 2000 0 = 800V V CE = +15V V GE R = 2.2 G 20000 Eon2,70A 15000 Eoff,70A 10000 Eoff,70A 10-2005 Eon2,35A Eoff,17.5A Eon2,17.5A 0 5000 Eon2,35A Eon2,17.5A Rev C Eoff,35A Eoff,17.5A Eoff,35A 050-7601 50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 0 125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES 4,000 Cies C, CAPACITANCE ( F) 1,000 500 IC, COLLECTOR CURRENT (A) 120 100 80 60 40 20 APT35GN120B(G) P C0es 100 50 Cres 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 200 400 600 800 1000 1200 1400 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0 0.35 0.30 0.25 0.20 0.5 0.15 0.10 0.05 0 0.3 SINGLE PULSE Note: ZJC, THERMAL IMPEDANCE (C/W) 0.9 0.7 PDM t1 t2 0.1 0.05 10-5 10-4 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 RC MODEL 140 FMAX, OPERATING FREQUENCY (kHz) Junction temp. (C) 0.163 Power (watts) 0.168 Case temperature. (C) 0.181F 0.00661F 10 = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf max T = 125C J T = 75C C D = 50 % V = 800V CE R = 2.2 G F FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL fmax2 = Pdiss = Pdiss - Pcond Eon2 + Eoff TJ - TC RJC 20 30 40 50 60 70 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 1 10 050-7601 Rev C 10-2005 APT35GN120B(G) APT40DQ120 10% td(on) Gate Voltage TJ = 125C V CC IC V CE 90% tr Collector Current A D.U.T. 5% Switching Energy 10% 5% CollectorVoltage Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions VTEST 90% *DRIVER SAME TYPE AS D.U.T. Gate Voltage td(off) CollectorVoltage 90% TJ = 125C A V CE 100uH tf 10% IC V CLAMP B 0 Collector Current A DRIVER* D.U.T. Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions Figure 24, EON1 Test Circuit TO-247 Package Outline e1 SAC: Tin, Silver, Copper 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Collector 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) 4.50 (.177) Max. 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 10-2005 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Rev C Gate Collector Emitter 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. 050-7601 Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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