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| Composite Transistors XN4601 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For general amplification 0.650.15 2.8 -0.3 +0.2 +0.25 1.5 -0.05 6 0.650.15 1 0.3 -0.05 0.5 -0.05 0.95 +0.2 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.9 -0.05 1.90.1 5 2 0.95 4 3 0.40.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings 60 50 7 100 200 -60 -50 -7 -100 -200 300 150 -55 to +150 Unit V V V mA mA V 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC-74 Mini Type Package (6-pin) Marking Symbol: 5C Internal Connection 6 Tr1 1 2 3 V V mA mA mW C C 5 4 Tr2 0 to 0.05 0.1 to 0.3 0.8 q 2SD601A+2SB709A 1.1-0.1 0.16-0.06 +0.2 s Basic Part Number of Element +0.1 1.450.1 s Features +0.1 +0.1 1 Composite Transistors XN4601 (Ta=25C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = 10A, IE = 0 IC = 2mA, IB = 0 IE = 10A, IC = 0 VCB = 20V, IE = 0 VCE = 10V, IB = 0 VCE = 10V, IC = 2mA IC = 100mA, IB = 10mA VCB = 10V, IE = -2mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 160 0.1 150 3.5 min 60 50 7 0.1 100 460 0.3 V MHz pF typ max Unit V V V A A s Electrical Characteristics q Tr1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance q Tr2 Parameter Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCB = -20V, IE = 0 VCE = -10V, IB = 0 VCE = -10V, IC = -2mA IC = -100mA, IB = -10mA VCB = -10V, IE = 1mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz 160 -0.3 80 2.7 min -60 -50 -7 - 0.1 -100 460 -0.5 V MHz pF typ max Unit V V V A A Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance 2 Composite Transistors Common characteristics chart PT -- Ta 500 XN4601 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (C) Characteristics charts of Tr1 IC -- VCE -60 Ta=25C -50 IB=-300A -50 -60 VCE= - 5V Ta=25C IC -- I B -400 -350 IB -- VBE VCE= - 5V Ta=25C Collector current IC (mA) Collector current IC (mA) -250A -40 -200A -30 -40 Base current IB (A) -300 -250 -200 -150 -100 -50 -150A -30 -20 -100A -20 -10 -50A -10 0 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 0 0 -100 -200 -300 -400 0 0 -0.4 -0.8 -1.2 -1.6 Collector to emitter voltage VCE (V) Base current IB (A) Base to emitter voltage VBE (V) IC -- VBE -240 -10 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) VCE=-5V IC/IB=10 600 hFE -- IC VCE=-10V -200 25C Ta=75C -25C -3 -1 -0.3 -25C -0.1 -0.03 -0.01 Ta=75C 25C Forward current transfer ratio hFE 500 Collector current IC (mA) -160 400 Ta=75C 300 25C -25C 200 -120 -80 -40 100 -0.003 -0.001 -1 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 Base to emitter voltage VBE (V) Collector current IC (mA) Collector current IC (mA) 3 Composite Transistors fT -- IE 160 XN4601 Cob -- VCB 8 6 f=1MHz IE=0 Ta=25C VCB=-5V f=1kHz Rg=2k Ta=25C NF -- IE Collector output capacitance Cob (pF) Transition frequency fT (MHz) 140 120 100 80 60 40 20 0 0.1 VCB=-10V Ta=25C 7 6 5 4 3 2 1 0 -1 5 Noise figure NF (dB) 4 3 2 1 0.3 1 3 10 30 100 -2 -3 -5 -10 -20 -30 -50 -100 0 0.01 0.03 0.1 0.3 1 3 10 Emitter current IE (mA) Collector to base voltage VCB (V) Emitter current IE (mA) NF -- IE 20 18 16 VCB=-5V Rg=50k Ta=25C h Parameter -- IE 300 200 hfe 100 100 300 200 h Parameter -- VCE IE=2mA f=270Hz Ta=25C hfe Noise figure NF (dB) 14 12 10 8 6 4 2 0 0.1 1kHz 10kHz Parameter h f=100Hz 30 20 10 5 3 2 1 0.1 hoe (S) Parameter h 50 50 30 20 hoe (S) 10 5 3 hre (x10-4) hie (k) hie (k) VCE= - 5V f=270Hz Ta=25C 2 3 5 10 2 1 0.1 hre (x10-4) 0.2 0.3 0.5 1 0.2 0.3 0.5 1 2 3 5 10 0.2 0.3 0.5 1 2 3 5 10 Emitter current IE (mA) Emitter current IE (mA) Collector to emitter voltage VCE (V) Characteristics charts of Tr2 IC -- VCE 60 Ta=25C IB=160A 50 1000 1200 VCE=10V Ta=25C 200 IB -- VBE 240 IC -- VBE VCE=10V Collector current IC (mA) Base current IB (A) 140A 40 120A 100A 30 80A 20 60A 40A 10 20A 0 0 2 4 6 8 10 Collector current IC (mA) 800 160 600 120 Ta=75C 80 25C -25C 400 200 40 0 0 0.2 0.4 0.6 0.8 1.0 0 0 0.4 0.8 1.2 1.6 2.0 Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) Base to emitter voltage VBE (V) 4 Composite Transistors IC -- IB 240 VCE=10V Ta=25C 200 100 XN4601 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE -- IC 600 VCE=10V 30 10 3 1 0.3 25C 0.1 0.03 0.01 0.1 Ta=75C -25C Forward current transfer ratio hFE 500 Collector current IC (mA) 160 400 Ta=75C 25C 120 300 -25C 80 200 40 100 0 0 200 400 600 800 1000 0.3 1 3 10 30 100 0 0.1 0.3 1 3 10 30 100 Base current IB (A) Collector current IC (mA) Collector current IC (mA) fT -- IE 300 VCB=10V Ta=25C NV -- IC 240 VCE=10V GV=80dB 200 Function=FLAT Ta=25C 160 Transition frequency fT (MHz) 180 Noise voltage NV (mV) 240 120 Rg=100k 120 80 22k 4.7k 60 40 0 -0.1 -0.3 -1 -3 -10 -30 -100 0 10 20 30 50 100 200 300 500 1000 Emitter current IE (mA) Collector current IC (A) 5 |
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