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| BFR 93AW NPN Silicon RF Transistor * For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFR 93AW R2s Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 50 6 Q62702-F1489 1=B 2=E 3=C Package SOT-323 Unit V VCEO VCES VCBO VEBO IC IB Ptot mA mW TS 104 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point 1) 300 Tj TA Tstg RthJS 150 - 65 ... + 150 - 65 ... + 150 155 C K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-11-1996 BFR 93AW Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V A 100 nA 100 A 10 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V Semiconductor Group 2 Dec-11-1996 BFR 93AW Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 4.5 6 0.62 0.28 1.7 - GHz pF 0.9 dB 2 3.3 - IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 13 7.5 15 10 - IC = 30 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-11-1996 BFR 93AW SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 8.6752 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 20.011 1.5466 26.834 1.95 3.4649 3.1538 33.388 2.5184 0.72744 1.1061 0 3 V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 137.63 0.33395 59 7.2326 1.0075 0.70393 0.28319 0 0.34565 0 0 0.75935 A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.93633 2619.3 0.88761 0.70823 0.13193 0.5071 0.17765 1039.5 0.21422 0.75 1.11 300 fA fA V fF V eV K 0.015129 A 0.043806 mA All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.57 0.4 0.43 0.5 0 0.41 61 101 175 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-11-1996 BFR 93AW Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 400 mW Ptot 300 250 TS 200 150 TA 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 K/W RthJS 10 2 Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 5 Dec-11-1996 BFR 93AW Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 1.1 pF 7.0 GHz 6.0 10V 8V 5V 5.5 5.0 4.5 4.0 3.5 2V 3V Ccb 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 fT 3.0 2.5 2.0 1.5 1.0 0.7V 1V 0.1 0.0 0 4 8 12 16 V 24 0.5 0.0 0 10 20 30 40 VR mA IC 60 Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 18 dB 10V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 11 dB 5V 3V 2V 9 10V 5V 3V 2V G 14 12 10 8 G 8 7 6 5 4 1V 6 4 2 0 0 10 20 30 40 mA IC 60 3 1V 2 0.7V 1 0 -1 0 10 20 30 40 0.7V mA IC 60 Semiconductor Group 6 Dec-11-1996 BFR 93AW Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 16 VCE = Parameter, f = 900MHz 35 IC=30mA dB 0.9GHz dBm 0.9GHz G 12 IP3 25 5V 4V 3V 20 2V 10 1.8GHz 8 1.8GHz 15 6 10 4 5 0 0 2 4 6 8 V 12 0 10 20 30 40 1V 2 0 V CE mA IC 60 Power Gain Gma, Gms = f(f) VCE = Parameter 34 dB Power Gain |S21|2= f(f) VCE = Parameter 32 IC=30mA dB IC=30mA G 28 24 20 16 12 8 4 0 0.0 S21 26 22 18 14 10 6 2 -2 0.0 10V 2V 1V 0.5 1.0 1.5 2.0 2.5 0.7V GHz 3.5 f 10V 2V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Semiconductor Group 7 Dec-11-1996 |
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