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| Datasheet File OCR Text: |
| BAS85 SILICON SCHOTTKY BARRIER DIODE Features * * * For general applications Low turn-on voltage PN junction guard ring A B C Mechanical Data * * Glass case Weight: 0.05g (approx) A B C Min 3.4 1.40 0.20 Max 3.6 1.50 0.40 All Dimensions in mm Maximum Ratings @ TA = 25C unless otherwise specified Characteristic Continuous reverse voltage Forward continuous current* Peak forward current* Surge forward current* Power dissipation* Junction temperature Operating temperature range Storage temperature range @ tp = 1s @ TA = 65C Symbol VR IF IFM IFSM Ptot Tj TA TSTG Value 30 200 300 600 200 125 -65 to +125 -65 to +150 Unit V mA mA mA mW C C C Electrical Characteristics Characteristic Reverse breakdown voltage @ Tj = 25C unless otherwise specified Symbol V(BR)R Min 30 Typ -- Max -- Unit V 10 mA pulses * Valid provided that electrodes are kept at ambient temperature. DS30189 Rev. A-5 1 of 1 BAS85 |
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