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| Preliminary Product Description Stanford Microdevices' SGA-5489 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process featuring 1 micron emitters with FT up to 50 GHz. This circuit uses a darlington pair topology with resistive feedback for broadband performance as well as stability over its entire temperature range. Internally matched to 50 ohm impedance, the SGA-5489 requires only DC blocking and bypass capacitors for external components. Small Signal Gain vs. Frequency SGA-5489 DC-4000 MHz Silicon Germanium HBT Cascadeable Gain Block 25 20 dB 15 10 5 0 1 2 3 Frequency GHz 4 5 Product Features * DC-4000 MHz Operation * Single Voltage Supply * High Output Intercept: +30.8dBm typ. at 850 MHz * Low Current Draw: 60mA at 3.3V typ. * Low Noise Figure: 2.8dB typ. at 850 MHz Applications * Oscillator Amplifiers * PA for Low Power Applications * IF/ RF Buffer Amplifier * Drivers for CATV Amplifiers Units f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz dBm dBm dBm dBm dBm dBm dB dB dB MHz MHz f = DC-5000 MHz f = DC-5000 MHz f = 850 MHz f = 1950 MHz f = 2400 MHz f = 1950 MHz dB dB dB dB V o Symbol Parameters: Test Conditions: Z0 = 50 Ohms, ID = 60 mA, T = 25oC Output Pow er at 1dB Compression Min. Typ. 16.0 14.6 13.5 30.8 27.4 25.7 19.7 17.9 17.1 2100 4000 1.50:1 1.50:1 23.5 23.5 23.1 2.4 Max. P1dB IP3 Third Order Intercept Point Pow er out per tone = 0 dBm S21 BW3dB Bandw idth S11 S22 S12 NF VD Rth,j-l Small Signal Gain 3dB Bandw idth (Determined by S11, S22 Values) Input VSWR Output VSWR Reverse Isolation Noise Figure, ZS = 50 Ohms Device Voltage Thermal Resistance (junction - lead) 3.1 3.3 97 4.1 C/W The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved. 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-100618 Rev B Preliminary Preliminary SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier Absolute Maximum Ratings Operation of this device above any one of these parameters may cause permanent damage. Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth, j-l Parameter Supply C urrent Operati ng Temperature Maxi mum Input Power Storage Temperature Range Operati ng Juncti on Temperature Value 120 -40 to +85 +10 -40 to +150 +150 U nit mA C dB m C C Key parameters, at typical operating frequencies: Typical Parameter 500 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 850 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 1950 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 2400 MHz Gain Noise Figure Output IP3 Output P1dB Input Return Loss Isolation 25oC 20.2 3.0 31.3 16.3 20.3 23.3 19.7 2.8 30.8 16.0 17.5 23.5 17.9 2.4 27.4 14.6 15.2 23.5 17.1 3.7 25.7 13.5 14.7 23.1 Unit Test Condition (ID = 60 mA, unless otherw ise noted) dB dB ZS = 50 Ohms dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm dB m dB dB dB dB ZS = 50 Ohms dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm dB m dB dB dB dB ZS = 50 Ohms dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm dB m dB dB dB dB ZS = 50 Ohms dBm Tone spacing = 1 MHz, Pout per tone = 0 dBm dB m dB dB 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-100618 Rev B Preliminary Preliminary SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier Pin # 1 Function RF IN Description Device Schematic RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. GND Connection to ground. Use via holes for best performance to reduce lead inductance. Place vias as close to ground leads as possible. RF OUT/Vcc RF output and bias pin. Bias should be supplied to this pin through an external series resistor and RF choke inductor. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. GND Same as Pin 2. 2 3 4 Application Schematic for Operation at 850 MHz R ecommended B ias R esistor Values Supply Voltage(Vs) R bias (Ohms) 5V 25 7.5V 67 9V 92 12V 142 1uF 68pF 25 ohms VS For 7.5V operation or higher, a resistor with a power handling capability of 1/2W or greater is recommended. 33nH 50 ohm microstrip 2 1 3 100pF 4 100pF 50 ohm microstrip Application Schematic for Operation at 1950 MHz 1uF 22pF 25 ohms VS 22nH 50 ohm microstrip 2 1 3 68pF 4 68pF 50 ohm microstrip 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-100618 Rev B Preliminary Preliminary SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier S21, ID =60mA, T=+25C 25 20 0 -10 S12, ID =60mA, T=+25C dB 15 10 5 0 1 2 3 4 5 dB -20 -30 -40 0 1 2 3 4 5 Frequency GHz Frequency GHz S11, ID =60mA, T=+25C 0 -10 0 -10 S22, ID =60mA, T=+25C dB -20 -30 -40 0 1 2 3 4 5 dB -20 -30 -40 0 1 2 3 4 5 Frequency GHz Frequency GHz S11, ID=60mA, Ta=25C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz S22, ID=60mA, Ta=25C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz 6 GHz 6 GHz 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-100618 Rev B Preliminary Preliminary SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier S21, ID =60mA, T=-40C 25 20 S12, ID =60mA, T=-40C 0 -10 dB 15 10 5 0 1 2 3 4 5 dB -20 -30 -40 0 1 2 3 4 5 Frequency GHz Frequency GHz S11, ID =60mA, T=-40C 0 -10 0 -10 -20 S22, ID =60mA, T=-40C dB -20 -30 -40 0 1 2 3 4 5 dB -30 -40 -50 0 1 2 3 4 5 Frequency GHz Frequency GHz S11, ID=60mA, Ta= -40C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz S22, ID=60mA, Ta= -40C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz 6 GHz 6 GHz 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-100618 Rev B Preliminary Preliminary SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier S21, ID =60mA, T=85C 25 20 0 -10 S12, ID =60mA, T=85C dB 15 10 5 0 1 2 3 4 5 dB -20 -30 -40 0 1 2 3 4 5 Frequency GHz S11, ID =60mA, T=85C Frequency GHz S22, ID =60mA, T=85C 0 -10 dB 0 -10 dB -20 -30 -40 0 1 2 3 4 5 Frequency GHz -20 -30 -40 0 1 2 3 4 5 Frequency GHz S11, ID=60mA, Ta=85C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz S22, ID=60mA, Ta=85C Freq. Min = 0.1 GHz Freq. Max = 6.0 GHz 6 GHz 6 GHz 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-100618 Rev B Preliminary Preliminary SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier Caution ESD Sensitive: Appropriate precautions in handling, packaging and testing devices must be observed. Part Number Ordering Information Part Number SGA-5489 Reel Size 13" Devices/Reel 3000 Package Dimensions Outline Drawing Part Symbolization The part will be symbolized with a "A54" designator on the top surface of the package. 1 A54 2 4 3 PCB Pad Layout 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 7 http://www.stanfordmicro.com EDS-100618 Rev B Preliminary Preliminary SGA-5489 DC-4000 MHz 3.3V SiGe Amplifier Component Tape and Reel Packaging Tape Dimensions For 89 Outline D escription C avi ty Length Wi dth D epth Pi tch Bottom Hole D i ameter D i ameter Pi tch Posi ti on Wi dth T pe Thi ckness a Wi dth Thi ckness C avi ty to Perforati on (Wi dth D i recti on) C avi ty to Perforati on (Length D i recti on) Symbol A B K P1 D1 D0 P0 E C t W T F P2 Siz e (mm)leel 4.91 +/- 0.01 4.52 +/- 0.01 1.90 +/- 0.01 8.00 +/- 0.01 1.60 +/- 0.10 1.55 +/- 0.05 4.00 +/- 0.01 1.75 +/- 0.01 9.10 +/- 0.25 0.05 +/- 0.01 12.0 +/- 0.03 0.30 +/- 0.05 5.50 +/- 0.10 2.00 +/- 0.10 Perforati on C over T pe a C arri er T pe a D i stance 522 Almanor Ave., Sunnyvale, CA 94086 Phone: (800) SMI-MMIC 8 http://www.stanfordmicro.com EDS-100618 Rev B |
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