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| 20V P-Channel Power MOSFET General Description The AAT7357 is a low threshold dual P-channel MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech's ultra-highdensity MOSFET process and space-saving, small-outline, J-lead package, performance superior to that normally found in a TSSOP-8 footprint has been squeezed into the footprint of a TSOPJW-8 package. AAT7357 Features * * * Drain-Source Voltage (max): -20V Contiunous Drain Current1 (max) = -5A @ 25C Low On-Resistance: -- 39m @ VGS = -4.5V -- 63m @ VGS = -2.5V Dual TSOPJW-8 Package D1 8 Applications * * * Battery Packs Battery-Powered Portable Equipment Cellular and Cordless Telephones Top View D1 7 D2 6 D2 5 Absolute Maximum Ratings TA = 25C, unless otherwise noted. Symbol VDS VGS ID IDM IS PD TJ TSTG 1 S1 2 G1 3 S2 4 G2 Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ = 150C1 Pulsed Drain Current2 Continuous Source Current (Source-Drain Diode)1 Maximum Power Dissipation1 Operating Junction Temperature Range Storage Temperature Range TA = 25C TA = 70C Value -20 12 5 4 12 -1.3 1.6 1.0 -55 to 150 -55 to 150 Units V A TA = 25C TA = 70C W C C Thermal Characteristics1 Symbol RJA RJA2 RJF Description Junction-to-Ambient Steady State, One FET On Junction-to-Ambient t<5 Seconds Junction-to-Foot Typ 115 64 60 Max 140 78 72 Units C/W C/W C/W 1. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RJF + RFA = RJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RJF is guaranteed by design; however, RCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2. Pulse test: Pulse Width = 300s. 7357.2005.04.1.0 1 20V P-Channel Power MOSFET Electrical Characteristics TJ = 25C, unless otherwise noted. Symbol Description Conditions Min Typ Max Units V 30 49 39 63 m A V nA A S AAT7357 DC Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = -250A -20 VGS = -4.5V, ID = -5A RDS(ON) Drain-Source On-Resistance1 VGS = -2.5V, ID = -4A 1 ID(ON) On-State Drain Current VGS = -4.5V, VDS = -5V (pulsed) -12 VGS(th) Gate Threshold Voltage VGS = VDS, ID = -250A -0.6 IGSS Gate-Body Leakage Current VGS = 12V, VDS = 0V VGS = 0V, VDS = -20V IDSS Drain-Source Leakage Current VGS = 0V, VDS = -16V, TJ = 70C2 1 gfs Forward Transconductance VDS = -5V, ID = -5A Dynamic Characteristics2 QG Total Gate Charge VDS = -10V, RD = 2.0, VGS = -4.5V QGS Gate-Source Charge VDS = -10V, RD = 2.0, VGS = -4.5V QGD Gate-Drain Charge VDS = -10V, RD = 2.0, VGS = -4.5V tD(ON) Turn-On Delay VDS = -10V, RD = 2.0, VGS = -4.5V, RG = 6 tR Turn-On Rise Time VDS = -10V, RD = 2.0, VGS = -4.5V, RG = 6 tD(OFF) Turn-Off Delay VDS = -10V, RD = 2.0, VGS = -4.5V, RG = 6 tF Turn-Off Fall Time VDS = -10V, RD = 2.0, VGS = -4.5V, RG = 6 Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage1 VGS = 0, IS = -5A 3 IS Continuous Diode Current 100 -1 -5 12 14 3.5 5.6 12 20 33 40 -1.2 -1.3 nC ns V A 1. Pulse test: Pulse Width = 300s. 2. Guaranteed by design. Not subject to production testing. 3. Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5-second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RJF + RFA = RJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RJF is guaranteed by design; however, RCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. 2 7357.2005.04.1.0 20V P-Channel Power MOSFET Typical Characteristics AAT7357 TJ = 25C, unless otherwise noted. Output Characteristics 12 Transfer Characteristics 12 10 4V through 10V 8 VD = VG 25C 3.5V 3V ID (A) 2V 8 6 4 IDS (A) 4 2.5V 1.5V 2 0 125C -55C 0 1 2 3 4 0 0 0.5 VDS (V) 1 1.5 2 VGS (V) On-Resistance vs. Drain Current 0.08 0.08 On-Resistance vs. Gate to Source Voltage 0.06 0.06 RDS(ON) () RDS(ON) (m) VGS = 2.5 V 0.04 0.04 0.02 VGS = 4.5 V 0.02 0 0 5 10 15 20 0 0 1 2 3 4 5 6 7 8 9 10 ID (A) VGS (V) On-Resistance vs. Junction Temperature 1.8 Threshold Voltage 0.5 Normalized RDS(ON) VGS(th) Variance (V) 1.6 1.4 1.2 1.0 0.8 0.6 VGS = 4.5V ID = 4.5A 0.4 0.3 0.2 0.1 0 -0.1 -0.2 -0.3 ID = 250A -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 TJ (C) TJ (C) 7357.2005.04.1.0 3 20V P-Channel Power MOSFET Typical Characteristics AAT7357 TJ = 25C, unless otherwise noted. Source-Drain Diode Forward Voltage 100 Single Pulse Power, Junction to Ambient 40 35 30 Power (W) 1.2 10 25 20 15 10 5 IS (A) 1 TJ = 150C TJ = 25C 0.1 0 0 0 .2 0.4 0 .6 0.8 1 1.00E-03 1.00E-02 1.00E-01 1.00E+01 1.00E+01 1.00E+02 1.00E+03 VSD (V) Time (s) Transient Thermal Response, Junction to Ambient Normalized Effective Transient Thermal Impedance 10 1 .5 0.1 .2 .1 .02 .01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.01 Time (s) 4 7357.2005.04.1.0 20V P-Channel Power MOSFET Ordering Information Package TSOPJW-8 AAT7357 Marking1 NBXYY Part Number (Tape and Reel)2 AAT7357ITS-T1 Package Information TSOPJW-8 0.325 0.075 2.40 0.10 0.65 BSC 0.65 BSC 0.65 BSC 2.85 0.20 7 0.15 0.05 3.025 0.075 0.9625 0.0375 1.0175 0.0925 0.04 REF 0.055 0.045 0.010 0.45 0.15 2.75 0.25 All dimensions in millimeters. 1. XYY = assembly and date code. 2. Sample stock is generally held on part numbers listed in BOLD. 7357.2005.04.1.0 5 20V P-Channel Power MOSFET AAT7357 AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6 7357.2005.04.1.0 |
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