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Datasheet File OCR Text: |
MS2207 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS Features * * * * * * * 1090 MHz 50 VOLTS 15:1 VSWR CAPABILITY INPUT / OUTPUT MATCHING POUT = 400 WATTS GP = 8.0 dB MINIMUM COMMON BASE CONFIGURATION DESCRIPTION: The MS2207 is a high power NPN bipolar transistor specifically designed for TCAS and Mode-S driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 15:1 output VSWR at rated conditions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol PDISS IC VCC TJ TSTG Parameter Value 880 24 55 200 -65 to +200 Unit W A V C C Power Dissipation Device Current Collector Supply Voltage Junction Temperature Storage Temperature Thermal Data RTH(J-C) Junction-case Thermal Resistance 0.17 C/W 053-7113 Rev - 11-2002 MS2207 25 ELECTRICAL SPECIFICATIONS (Tcase = 25C) Symbol BVCBO BVEBO BVCER Ices HFE IC = 50 mA IE = 15 mA IC = 50 mA VBE = 50 V VCE = 5 V STATIC Test Conditions Min. IE = 0 mA IC = 0 mA RBE = 10 VCE = 0 V IC = 5 A 65 3.5 65 --10 Value Typ. ----------- Max. ------30 200 Unit V V V mA --- DYNAMIC Symbol POUT C GP Conditions f = 1090 MHz f = 1090 MHz f = 1090 MHz Pulse Width = 32S Test Conditions Min. PIN = 63W PIN = 63W PIN = 63W VCC = 50V VCC = 50V VCC = 50V 400 45 8.0 Value Typ. ------- Max. ------- Unit W % dB Duty Cycle = 2% IMPEDANCE DATA FREQ 1025 MHz 1090 MHz 1150 MHz PIN = 63 W VCC = 50 V ZIN() ) 2.4 + j 3.2 3.8 + j 2.5 2.3 + j 1.3 ZCL() ) 1.4 - j 2.2 1.6 - j 1.6 1.2 - j 1.1 053-7113 Rev - 11-2002 MS2207 PACKAGE MECHANICAL DATA 053-7113 Rev - 11-2002 |
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