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  Datasheet File OCR Text:
 Ordering number : ENN7722A
CPH3237
CPH3237
Applications
*
NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
* * * * * * *
Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Narrow hFE range. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2!0.8mm) Conditions Ratings 15 15 6 6 9 1.2 0.9 150 --55 to +150 Unit V V V A A A W C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE fT Cob Conditions VCB=12V, IE=0 VEB=4V, IC=0 VCE=2V, IC=500mA VCE=2V, IC=500mA VCB=10V, f=1MHz Ratings min typ max 0.1 0.1 250 250 46 400 MHz pF Unit A A
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
22004 TS IM / D0503EA TS IM TA-100854 No.7722-1/4
CPH3237
Continued from preceding page.
Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf IC=3A, IB=60mA IC=3A, IB=60mA IC=10A, IE=0 IC=1mA, RBE= IE=10A, IC=0 See specified test circuit. See specified test circuit. See specified test circuit. 15 15 5 32 250 10 Conditions Ratings min typ 80 0.85 max 120 1.2 Unit mV V V V V ns ns ns
Marking : DH
Package Dimensions
unit : mm 2150A
Switching Time Test Circuit
0.4
0.2
2.9
PW=20s D.C.1%
0.15
IB1 OUTPUT IB2 VR 50 + 100F + 470F VCC=5V RB
INPUT
0.6
3
RL
0.05
1
1.9
2
0.6
1.6
2.8
0.7 0.9
1 : Base 2 : Emitter 3 : Collector SANYO : CPH3
VBE= --5V
0.2
IC=20IB1= --20IB2=3A
6
IC -- VCE
60m A
6
IC -- VBE
VCE=2V
20mA
40m A
5
15mA
Collector Current, IC -- A
5
Collector Current, IC -- A
4
10mA
4
3
Ta=75C
0 0.1 0.2 0.3 0.4 0.5 0.6
6mA
2
2
4mA
1
2mA
IB=0
0.2 0.4 0.6 0.8 1.0 IT06851
1
0 0
0 0.7 0.8 0.9 1.0
Collector-to-Emitter Voltage, VCE -- V
7
hFE -- IC
Base-to-Emitter Voltage, VBE -- V
3 2
25C --25C
IT06852
8mA
3
VCE(sat) -- IC
VCE=2V
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
IC / IB=20
5
DC Current Gain, hFE
0.1 7 5 3 2
Ta=75C
3
25C
--25C
2
= Ta
75
C
C 5
--2
25
C
0.01 7
100 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
5 7 10 IT06853
5 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
5 7 10 IT06854
No.7722-2/4
CPH3237
3 2
VCE(sat) -- IC
IC / IB=50
2
VBE(sat) -- IC
IC / IB=50
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
0.1 7 5
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
1.0
75 C --2 5 C
C 25
Ta =
Ta= --25C
7
3 2
25C 75C
5
0.01 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
5
5 7 10 IT06855
3 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
fT -- IC
VCE=2V
Collector Current, IC -- A
100
5 7 10 IT06856
Cob -- VCB
f=1MHz
Gain-Bandwidth Product, fT -- MHz
3 2
Output Capacitance, Cob -- pF
2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7
7
100 7 5
5
3 2 0.01 3 0.1
2
3
5
7 1.0
2
3
5
7
10
2
3
Collector Current, IC -- A
10 7 5
IT06857 1.0
Collector-to-Base Voltage, VCB -- V
IT06858
ASO
ICP=9A IC=6A
10 0m
PC -- Ta
100s
Collector Dissipation, PC -- W
Collector Current, IC -- A
3 2 1.0 7 5 3 2 0.1 7 5 3 2
10
s
0.9
50 s 0
ms
M
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0
ou
nt
ed
1m s
DC
on
op
ac
era
er
tio
am
n
ic
bo
ar
d
(6
00
m
m2 !
0.
8m
0.01 0.1
Ta=25C Single pulse Mounted on a ceramic board (600mm2!0.8mm)
2 3 5 7 1.0 2 3 5 7 10 2 3
m
)
0
20
40
60
80
100
120
140
160
Collector-to-Emitter Voltage, VCE -- V
IT06859
Ambient Temperature, Ta -- C
IT06860
No.7722-3/4
CPH3237
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2004. Specifications and information herein are subject to change without notice.
PS No.7722-4/4


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Part # Manufacturer Description Price BuyNow  Qty.
CPH3237-TL-E
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Rochester Electronics

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CPH3237-TL-E
SANYO Semiconductor Co Ltd NPN Epitaxial Planar Silicon Transistor For DC/DC Converter Applications ' 1000: USD0.3771
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100: USD0.417
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CPH3237-TL-E
onsemi NPN Epitaxial Planar Silicon Transistor For DC/DC Converter Applications ' 1000: USD0.3771
500: USD0.3992
100: USD0.417
25: USD0.4347
1: USD0.4436
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