 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Ordering number:EN5387 FX901 DC-DC Converter Applications Features * Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low forward-voltage Schottky barrier diode faciliteting high-density mounting. PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode Package Dimensions unit:mm 2133 [FX901] Electrical Connection 1:Base 2:Emitter 3:Anode, Source 4:Gate 5, 6:Common (Collector, Cathode, Drain) SANYO:XP5 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25C Parameter Allowable Power Dissipation Total Power Dissipation Storage Temperature [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Junction Temperature [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Channel Temperature [SBD] Average Rectified Current IO 500 mA VDSS VGSS ID IDP Tch PW10s, duty cycle1% 11 10 2 8 150 V V A A C Symbol P P PT Tstg VCBO VCEO VEBO IC ICP IB Tj Tc=25C, 1 unit Conditions Mounted on ceramic board (750mm2x0.8mm) 1 unit Mounted on ceramic board (750mm2x0.8mm) Ratings 8 1.5 2 -55 to +150 -15 -11 -7 -3 -5 -600 150 Unit W W W C V V V A A mA C * Marking:901 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/32996YK (KOTO) TA-0622 No.5387-1/5 FX901 Continued from preceding page. Electrical Characteristics at Ta = 25C Parameter [TR] Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Turn-ON time Storage Time Fall Time [MOSFET] D-S Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay TIme Fall Time [SBD] Forward Voltage Reverse Recovery Time VF trr IF=500mA IF=500mA, di/dt=50A/s 0.4 20 0.45 30 V ns V(BR)DSS IDSS IGSS VGS(off) | Yfs | RDS(on) RDS(on) Ciss Coss Crss td(on) tr td(off) tf ID=1mA, VGS=0 VDS=10.4V, VGS=0 VGS=8V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=4V ID=500mA, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit 0.5 1.8 2.8 140 200 185 210 40 15 40 50 35 200 320 11 400 10 1.5 V A A V S m m pF pF pF ns ns ns ns ICBO IEBO hFE(1) hFE(2) fT Cob VCE(sat) VBE(sat) VCB=-12V, IE=0 VEB=-6V, IC=0 VCE=-2V, IC=-0.5A VCE=-2V, IC=-3A VCE=-2V, IC=-0.3A VCB=-10V, f=1MHz IC=-1.5A, IB=-30mA IC=-1.5A, IB=-30mA -15 -11 -7 25 200 10 140 70 400 26 -0.22 -0.9 -0.4 -1.2 MHz pF V V V V V ns ns ns -0.1 -0.1 560 A A Symbol Conditions Ratings min typ max Unit V(BR)CBO IC=-10A, IE=0 V(BR)CEO IC=-1mA, RBE= V(BR)EBO ton tstg tf IE=-10A, IC=0 See specified Test Citcuit See specified Test Circuit See specified Test Circuit Swithing Time Test CIrcuit [TR] Trr Test Circuit [MOSFET] No.5387-2/5 FX901 No.5387-3/5 FX901 No.5387-4/5 FX901 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.5387-5/5 |
Price & Availability of FX901
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |