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TN6717A / NZT6717 Discrete POWER & Signal Technologies TN6717A NZT6717 C E C C TO-226 BE B SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 39. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 80 80 5.0 1.2 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TN6717A 1.0 8.0 50 125 Max *NZT6717 1.0 8.0 125 Units W mW/C C/W C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. (c) 1997 Fairchild Semiconductor Corporation TN6717A / NZT6717 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Emitter-Cutoff Current I C = 1.0 mA, IB = 0 I C = 100 A, I E = 0 I E = 100 A, IC = 0 VCB = 60 V, IE = 0 VEB = 5.0 V, IC = 0 80 80 5.0 0.1 0.1 V V V A A ON CHARACTERISTICS* hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage I C = 50 mA, VCE = 1.0 V I C = 250 mA, VCE = 1.0 V I C = 250 mA, IB = 100 mA I C = 250 mA, VCE = 1.0 V 80 50 250 0.5 1.2 V V SMALL SIGNAL CHARACTERISTICS hfe Ccb Small-Signal Current Gain Collector-Base Capacitance I C = 200 mA, VCE = 5.0 V, f = 20 MHz VCB = 10 V, IE = 0, f = 1.0 MHz 2.5 25 30 pF *Pulse Test: Pulse Width 300 s, Duty Cycle 1.0% Typical Characteristics 300 250 200 25 C VCESAT- COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current V CE = 5V 125 C Collector-Emitter Saturation Voltage vs Collector Current 0.5 0.4 0.3 25 C = 10 150 100 - 40 C 0.2 125 C 50 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 1.5 0.1 - 40 C 0 0.01 0.1 I C - COLLECTOR CURRENT (A) P 39 1 TN6717A / NZT6717 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) V BE(ON) BASE-EMITTER ON VOLTAGE (V) VBESAT- BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 1.2 1 0.8 0.6 0.4 0.2 - 40 C 25 C 125 C Base-Emitter ON Voltage vs Collector Current 1 = 10 0.8 - 40 C 25 C 0.6 125 C 0.4 V CE = 5V 0.01 0.1 - COLLECTOR CURRENT (A) P 39 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 0.2 0.001 I C 1 0.5 0.4 0.3 25 C C OBO - COLLECTOR-BASE CAPACITANCE (pF) VCESAT- COLLECTOR-EMITTER VOLTAGE (V) Collector-Emitter Saturation Voltage vs Collector Current = 10 Collector-Base Capacitance vs Collector-Base Voltage 40 f = 1 MHz 30 20 0.2 125 C 0.1 - 40 C 10 0 0.01 0.1 I C - COLLECTOR CURRENT (A) P 39 1 0 0 4 8 12 Pr39 16 20 24 28 V CB- COLLECTOR-BASE VOLTAGE (V) f T - GAIN BANDWIDTH PRODUCT (MHz) 500 V CE = 10V 400 300 200 100 0 I C - COLLECTOR CURRENT (A) Gain Bandwidth Product vs Collector Current Safe Operating Area TO-226 10 10 1 DC T 100 S* S* DC *PULSED OPERATION T A = 25 C T CO 1.0 LLE CTO ms RL * EA AM D= BIE 25 NT C = 0.1 25 C LIMIT DETERMINED BY BV CEO 1 10 100 I C - COLLECTOR CURRENT (mA) 1000 0.01 1 10 V CE - COLLECTOR-EMITTER VOLTAGE (V) 100 TN6717A / NZT6717 NPN General Purpose Amplifier (continued) Typical Characteristics (continued) Power Dissipation vs Ambient Temperature 1 PD - POWER DISSIPATION (W) 0.75 TO-226 SOT-223 0.5 0.25 0 0 25 50 75 100 TEMPERATURE (o C) 125 150 |
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