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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
L E B
BSS64
EPITAXIAL PLANAR NPN TRANSISTOR
L
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
A G
SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg
RATING 120 80 5 100 -100 200 150 -65 150
UNIT V V V mA mA mW
2
3
1
P
P
DIM A B C D E G H J K L M N P
MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
C
N
H
M
1. EMITTER 2. BASE 3. COLLECTOR
K
SOT-23
Marking
J
D
Lot No.
Type Name
U6
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO TEST CONDITION IC=4mA, IB=0 IC=100 A, IE=0 IE=100 A, IC=0 VCB=90V, IE=0 VCB=90V, IE=0, Ta=150 VEB=5V, IC=0 VCE=1V, IC=1mA DC Current Gain hFE VCE=1V, IC=4mA VCE=1V, IC=10mA VCE=1V, IC=20mA Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance VBE(sat) VCE(sat) fT Cob IC=4mA, IB=0.4mA IC=4mA, IB=0.4mA IC=50mA, IB=15mA VCE=10V, IC=4mA, f=100MHz VCB=10V, IE=0, f=1MHz MIN. 80 120 5.0 20 60 TYP. 60 80 55 MAX. 100 50 200 1.2 0.15 0.2 5.0 V V MHz pF UNIT V V V nA A nA
1998. 6. 15
Revision No : 1
1/1

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