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| DATA SHEET MOS FET WITH SCHOTTKY BARRIER DIODE PA1980 P-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DESCRIPTION The PA1980 is a switching device, which can be driven directly by a 1.8 V power source. This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics, and a low leakage Schottky barrier diode, and is suitable for applications such as DC/DC converter of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.32 +0.1 -0.05 0.65-0.15 +0.1 0.16+0.1 -0.06 2.8 0.2 6 5 4 1.5 0 to 0.1 1 2 3 FEATURES * 1.8 V drive available (MOS FET) * Low on-state resistance (MOS FET) RDS(on)1 = 135 m MAX. (VGS = -4.5 V, ID = -1.0 A) RDS(on)2 = 183 m MAX. (VGS = -2.5 V, ID = -1.0 A) RDS(on)3 = 284 m MAX. (VGS = -1.8 V, ID = -0.5 A) * Low reverse current (Schottky barrier diode) IR = 20 A MAX. (VR = 40 V) 0.95 0.95 0.65 0.9 to 1.1 1.9 2.9 0.2 1: Anode 2: Source 3: Gate 4: Drain 5: N/C 6: Cathode ORDERING INFORMATION PART NUMBER PACKAGE SC-95 (Mini Mold Thin Type) PIN CONNECTION (Top View) PA1980TE 6 5 4 Marking: TW 1 2 3 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD 100 V TYP. (C = 200 pF, R = 0 , Single pulse) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G16550EJ1V0DS00 (1st edition) Date Published February 2003 NS CP(K) Printed in Japan 2003 PA1980 MOS FET ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg -20.0 m8.0 m2.0 m8.0 0.57 150 -55 to +125 V V A A W C C Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on FR-4 board of 5000 mm x 1.1 mm, t 5 sec. 2 SCHOTTKY BARRIER DIODE ABSOLUTE MAXIMUM RATINGS (TA = 25C) Repetitive Peak Reverse Voltage Average Forward Current Surge Current Note4 Note3 VRRM IF(AV) IFSM Tj Tstg 2 40 0.5 5.5 +125 -55 to +125 V A A C C Junction Temperature Storage Temperature Notes 3. Mounted on FR-4 board of 5000 mm x 1.1 mm 4. 50 Hz sine wave, 1 cycle 2 Data Sheet G16550EJ1V0DS PA1980 MOS FET ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 TEST CONDITIONS VDS = -20.0 V, VGS = 0 V VGS = m8.0 V, VDS = 0 V VDS = -10.0 V, ID = -1.0 mA VDS = -10.0 V, ID = -1.0 A VGS = -4.5 V, ID = -1.0 A VGS = -2.5 V, ID = -1.0 A VGS = -1.8 V, ID = -0.5 A VDS = -10.0 V VGS = 0 V f = 1.0 MHz VDD = -10.0 V, ID = -1.0 A VGS = -4.0 V RG = 10 MIN. TYP. MAX. -10 UNIT A A V S m10 -0.45 1.0 -0.75 4.1 116 142 170 272 60 30 9 5 33 9 135 183 284 -1.50 Forward Transfer Admittance Drain to Source On-state Resistance m m m pF pF pF ns ns ns ns nC nC nC V Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) VDD = -16.0 V VGS = -4.0 V ID = -2.0 A IF = 2.0 A, VGS = 0 V 2.3 0.6 0.6 0.90 Note Pulsed: PW 350 s, Duty Cycle 2% SCHOTTKY BARRIER DIODE ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS Forward Voltage Reverse Current SYMBOL VF IR TEST CONDITIONS IF = 0.5 A VR = 40.0 V MIN. TYP. 0.44 3 MAX. 0.51 20 UNIT V A TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL VGS PG. RG Wave Form VGS(-) 0 10% VGS 90% IG = -2 mA 50 RL VDD VDD PG. 90% VDS(-) 90% 10% 10% VGS(-) 0 = 1 s Duty Cycle 1% VDS VDS Wave Form 0 td(on) ton tr td(off) toff tf Data Sheet G16550EJ1V0DS 3 PA1980 MOS FET TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0.6 Mounted on FR-4 board of 2 5000 mm x 1.1 mm, t 5 sec. dT - Percentage of Rated Power - % 100 PT - Total Power Dissipation - W 0.5 0.4 0.3 0.2 0.1 0 80 60 40 20 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TA - Ambient Temperature - C TA - Ambient Temperature - C FORWARD BIAS SAFE OPERATING AREA - 1 00 R D S (o n) Lim ite d (V G S = -4.5 V ) ID(pulse) ID(DC) -1 10 m s - 0 .1 100 m s 5s ID - Drain Current - A - 10 PW = 1 m s S ingle p ulse M o unted on F R -4 bo ard o f 2 500 0 m m x 1.1 m m -1 - 10 - 0 .01 - 0 .1 - 1 00 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(ch-A) - Transient Thermal Resistance - C/W 100 10 Single pulse Mounted on FR-4 board of 2 5000 mm x 1.1 mm PD (FET) : P (SBD) = 1:0 1 1m 10 m 100 m 1 PW - Pulse Width - s 10 100 1000 4 Data Sheet G16550EJ1V0DS PA1980 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -8 Pulsed VGS = -4.5 V -1 - 10 FORWARD TRANSFER CHARACTERISTICS V D S = - 1 0 .0 V P u ls e d ID - Drain Current - A ID - Drain Current - A -6 - 0 .1 - 0 .0 1 - 0 .0 0 1 - 0 .0 0 0 1 - 0 .0 0 0 0 1 -4 T A = 1 25 C 7 5C 2 5C - 25 C -2.5 V -2 -1.8 V 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1 - 1.2 0 - 0 .5 -1 - 1 .5 -2 - 2 .5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = -10.0 V ID = -1.0 m A - 0.9 - 0.8 - 0.7 - 0.6 - 0.5 - 0.4 -50 0 50 100 150 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 10 VDS = -10.0 V Pulsed -1 VGS(off) - Gate Cut-off Voltage - V 1 T A = -25C 25C 75C 125C 0.1 0.01 - 0.01 - 0.1 -1 - 10 Tch - Channel Temperature - C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - m 300 VGS = -4.5 V Pulsed 250 TA = 125C 75C 25C -25C RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 300 VGS = -2.5 V Pulsed T A = 125C 75C 25C -25C 250 200 200 150 150 100 100 50 - 0.01 - 0.1 -1 - 10 50 - 0.01 - 0.1 -1 - 10 ID - Drain Current - A ID - Drain Current - A Data Sheet G16550EJ1V0DS 5 PA1980 RDS(on) - Drain to Source On-state Resistance - m 300 VGS = -1.8 V Pulsed 250 75C 200 25C -25C 150 T A = 125C RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 300 ID = -1.0 A Pulsed 250 200 150 100 100 50 - 0.01 50 0 -2 -4 -6 -8 - 0.1 -1 - 10 ID - Drain Current - A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 300 Pulsed 250 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1000 VGS = 0 V f = 1.0 M H z VGS = -1.8 V, ID = -0.5 A VGS = -2.5 V, ID = -1.0 A Ciss, Coss, Crss - Capacitance - pF C iss 200 100 C oss C rss 10 - 0.1 150 100 VGS = -4.5 V, ID = -1.0 A 50 -50 0 50 100 150 -1 - 10 - 100 Tch - Channel Temperature - C VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 100 td(off) VDD = -10.0 V VGS = -4.0 V RG = 10 DYNAMIC INPUT/OUTPUT CHARACTERISTICS -5 ID = -2.0 A VGS - Gate to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns -4 VDD = -4.0 V -10.0 V -16.0 V tf 10 td(on) tr -3 -2 -1 1 - 0.1 0 -1 - 10 0 0.5 1 1.5 2 2.5 3 ID - Drain Current - A QG - Gate Change - nC 6 Data Sheet G16550EJ1V0DS PA1980 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 10 VGS = 0 V Pulsed IF - Diode Forward Current - A 1 0.1 0.01 0.6 0.8 1 1.2 1.4 VF(S-D) - Source to Drain Voltage - V SCHOTTKY BARRIER DIODE TYPICAL CHARACTERISTICS (TA = 25C) FORWARD CURRENT vs. FORWARD VOLTAGE 10 T A = 125C 75C 25C -25C REVERSE CURRENT vs. REVERSE VOLTAGE 10000 1000 Pulsed T A = 125C 75C IR - Reverse Current - A IF - Forward Current - A 100 10 1 25C 1 0.1 -25C 0.01 0.1 Pulsed 0.01 0 0.2 0.4 0.6 0.8 1 1.2 0.001 0 10 20 30 40 50 VF - Forward Voltage - V VR - Reverse Voltage - V TERMINAL CAPACITANCE vs. REVERSE VOLTAGE 140 f = 1.0 MHz 120 100 80 60 40 20 0 0 10 20 30 40 50 CT - Terminal Capacitance - pF VR - Reverse Voltage - V Data Sheet G16550EJ1V0DS 7 PA1980 * The information in this document is current as of February, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. 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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
Price & Availability of UPA1980
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