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| NTA4001N Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection, SC-75 Features * * * * http://onsemi.com V(BR)DSS 20 V RDS(on) Typ @ VGS 1.5 W @ 4.5 V 2.2 W @ 2.5 V 3 ID MAX (Note 1) 238 mA Low Gate Charge for Fast Switching Small 1.6 X 1.6 mm Footprint ESD Protected Gate Pb-Free Package for "Green Manufacturing" Compliance Applications * Power Management Load Switch * Level Shift * Portable Applications such as Cell Phones, Media Players, Digital Cameras, PDA's, Video Games, Hand Held Computers, etc. 1 Maximum Ratings (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State = 25C Steady State = 25C tP v 10 ms Symbol VDSS VGS ID PD IDM TJ, TSTG ISD TL Value 20 10 238 300 714 -55 to 150 238 260 Unit V V mA mW mA C mA C Top View 3 2 N-Channel SC-75 (3-Leads) Gate 1 Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) 3 Drain Source 2 Thermal Resistance Ratings Parameter Junction-to-Ambient - Steady State (Note 1) Symbol RqJA Max 416 Unit C/W MARKING DIAGRAM 3 2 1 1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). SC-75 / SOT-416 CASE 463 Style 5 TF D 1 2 TF = Specific Device Code D = Date Code ORDERING INFORMATION Device NTA4001NT1 NTA4001NT1G Package SC-75 SC-75 Pb-Free Shipping 3000 / Tape & Reel 3000 / Tape & Reel (c) Semiconductor Components Industries, LLC, 2003 1 September, 2003 - Rev. 0 Publication Order Number: NTA4001N/D NTA4001N Electrical Characteristics (TJ = 25C unless otherwise specified) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Drain-to-Source On Resistance VGS(TH) RDS(on) () VDS = 3 V, ID = 100 mA VGS = 4.5 V, ID = 10 mA VGS = 2.5 V, ID = 10 mA Forward Transconductance CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Diode Characteristics Forward Diode Voltage VSD VGS = 0 V, IS = 10 mA 0.66 0.8 V td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 5 V, ID = 10 mA, RG = 10 W 13 15 98 60 ns ns CISS COSS CRSS VDS = 5 V, f = 1 MHz, VGS = 0 V 11.5 10 3.5 pF gFS VDS = 3 V, ID = 10 mA 0.5 1.0 1.5 2.2 80 1.5 3.0 3.5 V W mS V(BR)DSS IDSS IGSS VGS = 0 V, ID = 100 mA VGS = 0 V, VDS = 20 V VDS = 0 V, VGS = 10 V 20 1.0 100 V mA mA Symbol Test Condition Min Typ Max Unit NOTES: 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTA4001N 0.2 0.18 ID, DRAIN CURRENT (A) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 0.4 0.8 1.2 1.6 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 2 VGS = 1.2 V 0 0.6 TJ = -55C 0.8 1 1.2 1.4 1.6 1.8 VGS, GATE-TO-SOURCE VOLTAGE (V) 2 . VGS = 1.4 V VGS = 2.4 V TJ = 25C VGS = 10 V VGS = 5 V VGS = 2.8 V VGS = 2 V ID, DRAIN CURRENT (A) 0.16 0.2 VDS = 5 V 0.12 0.08 TJ = 125C 0.04 TJ = 25C Figure 1. On-region Characteristics Figure 2. Transfer Characteristics 2.5 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) VGS = 4.5 V 2 TJ = 125C 2.5 TJ = 25C VGS = 2.5 V 2 1.5 TJ = 25C 1.5 VGS = 4.5 V 1 TJ = -55C 1 0.5 0 0.05 0.1 0.15 ID, DRAIN CURRENT (A) 0.2 0.5 0 0.05 0.1 0.15 ID, DRAIN CURRENT (A) 0.2 Figure 3. On-resistance versus Drain Current and Temperature Figure 4. On-resistance versus Drain Current and Gate Voltage 2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 ID = 0.01 A VGS = 4.5 V IDSS, LEAKAGE (nA) 1000 VGS = 0 V 100 TJ = 150C TJ = 125C 10 1 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) 150 0 5 10 15 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 20 Figure 5. On-resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTA4001N 25 Ciss C, CAPACITANCE (pF) 20 Crss 100 15 Ciss Coss 5 Crss 0 10 VDS = 0 V 5 VGS 0 VDS VGS = 0 V 5 10 15 20 1 1 10 RG, GATE RESISTANCE (W) 100 t, TIME (ns) TJ = 25C 1000 VDD = 5 V ID = 10 mA VGS = 4.5 V td(off) tf tr td(on) 10 10 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 8. Resistive Switching Time Variation versus Gate Resistance Figure 7. Capacitance Variation 0.1 VGS = 0 V IS, SOURCE CURRENT (A) 0.08 TJ = 25C 0.06 0.04 0.02 0 0.5 0.55 0.6 0.65 0.7 0.75 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage versus Current http://onsemi.com 4 NTA4001N PACKAGE DIMENSIONS SC-75 / SOT-416 CASE 463-01 ISSUE C -A- S 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. DIM A B C D G H J K L S MILLIMETERS MIN MAX 0.70 0.90 1.40 1.80 0.60 0.90 0.15 0.30 1.00 BSC --- 0.10 0.10 0.25 1.45 1.75 0.10 0.20 0.50 BSC INCHES MIN MAX 0.028 0.035 0.055 0.071 0.024 0.035 0.006 0.012 0.039 BSC --- 0.004 0.004 0.010 0.057 0.069 0.004 0.008 0.020 BSC G -B- 1 D 3 PL 0.20 (0.008) M B K 0.20 (0.008) A J C L H STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN http://onsemi.com 5 NTA4001N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTA4001N/D |
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