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SPICE MODEL: MMSTA42
Lead-free Green
MMSTA42
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
* * * * * *
Epitaxial Planar Die Construction Complementary PNP Type Available (MMSTA92) Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4)
B G E A C BC
SOT-323 Dim A B C D E G
M
Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 0
Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18 8
0.65 Nominal
Mechanical Data
* * * * * * * * *
Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Marking (See Page 2): K3M Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate)
B
K
H
H J K L M
J
D
E
L
C
All Dimensions in mm
E
Maximum Ratings
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Note 1) Power Dissipation (Note 1)
@ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RJA Tj, TSTG Value 300 300 6.0 200 200 625 -55 to +150 Unit V V V mA mW C/W C
Characteristic
Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range
Note:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_freeindex.php. 4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30175 Rev. 9 - 2
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MMSTA42
(c) Diodes Incorporated
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 5) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product
@ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min 300 300 6.0 25 40 40 50 Max 100 100 Unit V V V nA nA Test Condition IC = 100A, IE = 0 IC = 1.0mA, IB = 0 IE = 100A, IC = 0 VCB = 200V, IE = 0 VCE = 6.0V, IC = 0 IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 30mA, VCE = 10V IC = 20mA, IB = 2.0mA IC = 20mA, IB = 2.0mA VCB = 20V, f = 1.0MHz, IE = 0 VCE = 20V, IC = 10mA, f = 100MHz
hFE VCE(SAT) VBE(SAT) Ccb fT
0.5 0.9 3.0
V V pF MHz
Ordering Information (Note 4 and 6)
Device MMSTA42-7-F
Notes:
Packaging SOT-323
Shipping 3000/Tape & Reel
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 5. Short duration pulse test used to minimize self-heating effect. 6. For Packaging Details go our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K3M
K3M = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September
Date Code Key Year Code 1998 J Month Code 1999 K Jan 1 2000 L 2001 M Feb 2 2002 N March 3 2003 P Apr 4 2004 R May 5 2005 S Jun 6 2006 T Jul 7 2007 U Aug 8 2008 V Sep 9 2009 W Oct O 2010 X Nov N 2011 Y 2012 Z Dec D
DS30175 Rev. 9 - 2
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YM
MMSTA42
200
VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V)
Note 1 PD, POWER DISSIPATION (mW)
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 10 100 TA = -50C TA = 25C IC IB = 10 TA = 150C
150
100
50
0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature
1000
IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current
1.0 VBE(ON), BASE EMITTER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs Collector Current TA = 150C TA = 25C VCE = 5V
10,000 VCE = 5V
hFE, DC CURRENT GAIN
1,000 TA = 150C
TA = -50C
100 TA = -50C 10
TA = 25C
1 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current
100 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V
10
1 1 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs Collector Current 10
DS30175 Rev. 9 - 2
3 of 4 www.diodes.com
MMSTA42
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DS30175 Rev. 9 - 2
4 of 4 www.diodes.com
MMSTA42

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