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2SD2700 Transistors Low frequency amplifier 2SD2700 Application Low frequency amplifier Driver External dimensions (Unit : mm) (2) 0.3 (1) 0~0.1 Features 1) A collector current is large. 2) VCE(sat) 180mV at IC = 1A / IB = 50mA ROHM : TUMT3 0.2 1.7 0.2 0.85Max. 2.1 0.17 0.77 0.15Max. Abbreviated symbol : FW 2.0 (3) 0.65 0.65 1.3 (1) Base (2) Emitter (3) Collector Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 15 12 6 2 4 0.4 0.82 150 -55 to +150 Unit V V V A A1 W C C 1 Single pulse, PW=1ms 2 Mounted on a 25x25x t 0.8mm Ceramic substrate Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Corrector output capacitance Pulsed Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 15 12 6 - - - 270 - - Typ. - - - - - 90 - 360 20 Max. - - - 100 100 180 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=10A IC=1mA IE=10A VCB=15V VEB=6V IC=1A, IB=50mA VCE=2V, IC=200mA VCE=2V, IE=-200mA, f=100MHz VCB=10V, IE=0A, f=1MHz Packaging specifications Package Code Type 2SD2700 Basic ordering unit (pieces) Taping TL 3000 Rev.A 1/2 2SD2700 Transistors Electrical characteristic curves COLLECTOR TO EMITTER SATURATION VOLTAGE : VCE(sat) (V) Ta=100C Ta=25C Ta=-40C VCE=2V Pulsed IC/IB=20/1 VCE=2V Pulsed COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 1 1 Ta=25C Pulsed DC CURRENT GAIN : hFE Ta=25C 0.1 Ta=100C Ta=-40C 0.1 100 IC/IB=50/1 0.01 0.01 IC/IB=20/1 IC/IB=10/1 10 0.001 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 0.001 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current Fig.2 Base-emitter saturation voltage vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current 10 TRANSITION FREQUENCY : fT (MHz) 1000 1000 Ta=25C VCE=2V f=100MHz Ta=25C COLLECTOR CURRENT : IC (A) VCE=2V Pulsed 1 VCE=5V f=100MHz SWITCHING TIME : (ns) 100 tstg Ta=100C Ta=25C 0.1 Ta=-40C 100 10 tdon tf 0.01 0.001 0 0.5 1 1.5 10 0.001 0.01 0.1 1 10 1 0.01 tr 0.1 1 10 BASE TO EMITTER CURRENT : VBE (V) EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.4 Grounded emitter propagation characteristics Fig.5 Gain bandwidth product vs. emitter current Fig.6 Switching time EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 Ta=25C IC=0A f=1MHz Cib 100 10 Cob 1 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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