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Power MOSFETs
2SJ0582
Silicon P-channel power MOSFET
Features
* Avalanche energy capability guaranteed * High-speed switching * No secondary breakdown
Unit: mm
6.50.1 5.30.1 4.350.1 2.30.1 0.50.1
7.30.1
1.80.1
* Non-contact relay * Solenoid drive * Motor drive * Control equipment * Switching mode regulator
4.60.1
1.00.1 0.10.05 0.50.1 0.750.1 2.30.1 (5.3) (4.35) (3.0)
2.50.1
(1.8)
1.00.2
Applications
0.8 max.
1
2
3
Absolute Maximum Ratings TC = 25C
Parameter Symbol Rating Drain-source surrender voltage VDSS -200 Gate-source surrender voltage VGSS 20 Drain current ID 2 Peak drain current IDP 4 Avalanche energy capability * EAS 10 Power dissipation PD 10 Ta = 25C 1 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 Note) *: L = 5 mH, IL = 2 A, 1 pulse Unit V V A A mJ W C C
1: Gate 2: Drain 3: Source EIAJ: SC-63
U-G1 Package
Marking Symbol: J0582 Internal Connection
D
G
Electrical Characteristics TC = 25C 3C
Symbol IDSS IGSS VDSS Vth RDS(on) Yfs VDF Ciss Short-circuit forward transfer capacitance (Common source) Short-circuit output capacitance (Common source) Reverse transfer capacitance (Common source) Turn-on delay time Rise time Turn-off delay time Fall time Thermal resistance (ch-c) Thermal resistance (ch-a) Coss Crss td(on) tr td(off) tf Rth(ch-c) Rth(ch-a) VDD = 100 V, ID = -1.0 A, RL = 100 VGS = -10 V Parameter Drain-source cutoff current Gate-source cutoff current Drain-source surrender voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Diode forward voltage Conditions VDS = -160 V, VGS = 0 VGS = 20 V, VDS = 0 ID = -1 mA, VGS = 0 VDS = -25 V, ID = -1 mA VGS = -10 V, ID = -1.0 A VDS = -25 V, ID = -1.0 A IDR = -2.0 A, VGS = 0 VDS = -20 V, VGS = 0, f = 1 MHz Min Typ
S
Max -10 10 -4.0 2.0 1.4
-200 -2.0 1.0 1.5 1.7 400 55 25 12 15 50 25
Unit A A V V S V pF pF pF ns ns ns ns C/W C/W
12.5 125
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004 SJG00001AED
(5.5)
1
2SJ0582
Safe operation area
102 Non repetitive pulse TC = 25C
15 (1) TC = Ta (2) Without heat sink
PD Ta
10
IDP ID 1 DC 1 ms 10 ms 10-1 100 ms
t = 100 s
Power dissipation PD (W)
Drain current ID (A)
10 (1)
5
(2)
10-2
1
10
102
103
0
0
50
100
150
Drain-source voltage VDS (V)
Ambient temperature Ta (C)
2
SJG00001AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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