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| NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR ISSUE 2 MARCH 94 ZTX300 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg 25 25 5 E-Line TO92 Compatible VALUE UNIT V V V mA mW C 500 300 -55 to +175 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO MIN. 25 25 5 0.2 0.2 0.35 0.65 50 150 6 7 1.0 300 MHz pF dB TYP. MAX. UNIT V V V A A CONDITIONS. IC=10A, IE=0 IC=5mA, IB=0 IE=10A, IC=0 VCB=25V, IE=0 VEB=4V, IC=0 IC=50mA, IB=5mA* IC=10mA, IB=1mA* IC=10mA, VCE=6V* IC=10mA, VCE=6V f=100MHz VCB=6V, IE=0 f=1MHz VCE=6V, f=1KHz RS=1500, IC=100A Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance Noise Figure fT Cobo N *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-156 ZTX300 TYPICAL CHARACTERISTICS 0.95 0.25 IC/IB=30 0.90 0.20 IC/IB=10 0.85 IC/IB=30 VBE(sat) - (Volts) VCE(sat) - (Volts) 0.15 IC/IB=10 0.80 0.10 0.75 0.05 0.70 10 20 30 40 50 60 0 10 20 30 40 50 60 IC - Collector Current (mA) IC - Collector Current (mA) VBE(sat) v IC VCE(sat) v IC 1.0 IC=50mA IB=5mA 0.9 200 VCE=6V VBE(sat) - (Volts) % Change of hFE 0.8 IC=10mA IB=1mA 150 IC=50mA IC=10mA 0.7 100 IC=100A 0.6 50 0.5 -100 -50 0 50 100 150 0 -100 -50 0 50 100 150 Ambient Temperature (C) Ambient Temperature (C) VBE(sat) v Ambient Temperature hFE v Ambient Temperature % Change of hFE 150 -55C +25C +100C 0.20 0.18 100 VCE(sat) - (Volts) 0.16 IC=50mA IB=5mA 0.14 50 0.12 0 0.1 1 10 100 1000 0.10 -100 -50 0 50 100 150 IC - Collector Current (mA) Ambient Temperature (C) hFE v IC VCE(sat) v Ambient Temperature 3-157 |
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