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| Power Transistors 2SA1499 Silicon PNP epitaxial planar type For high-speed switching 0.70.1 Unit: mm 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 s Features q q q q High foward current transfer ratio hFE High-speed switching High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw. (TC=25C) s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 16.70.3 14.00.5 Ratings -400 -400 -7 -1.2 - 0.6 25 2 150 -55 to +150 Unit V V V A A W C C Solder Dip 4.0 7.50.2 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf * Conditions VCB = -400V, IE = 0 VEB = -7V, IC = 0 IC = -10mA, IB = 0 VCE = -5V, IC = -100mA VCE = -5V, IC = -300mA IC = -300mA, IB = -60mA IC = -300mA, IB = -60mA VCE = -10V, IC = -100mA, f = 1MHz IC = -300mA, IB1 = -60mA, IB2 = 60mA, VCC = -100V min typ max -100 -100 Unit A A V -400 30 10 -1.0 -1.2 15 1.0 3.5 1.0 160 V V MHz s s s FE1 Rank classification Q 30 to 60 P 50 to 100 O 80 to 160 Rank hFE1 1 Power Transistors PC -- Ta 40 - 0.8 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=2.0W) TC=25C - 0.7 IB=-40mA 2SA1499 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100 IC/IB=5 -30 -10 -3 -1 TC=100C VCE(sat) -- IC Collector power dissipation PC (W) 35 30 25 20 15 10 Collector current IC (A) - 0.6 - 0.5 - 0.4 - 0.3 - 0.2 -1mA - 0.1 -10mA -8mA -6mA -4mA -2mA (1) 25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -25C (2) 5 (3) 0 0 20 40 60 80 100 120 140 160 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -1 -3 -10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 10000 hFE -- IC 1000 VCE=-5V 300 100 30 10 3 1 0.3 IC/IB=5 fT -- IC VCE=-10V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) -3 Forward current transfer ratio hFE -1 TC=-25C 100C 25C 1000 300 100 -25C 30 10 3 1 - 0.001 - 0.003 - 0.01 - 0.03 - 0.1 - 0.3 TC=100C 25C - 0.3 - 0.1 - 0.03 - 0.01 - 0.01 Transition frequency fT (MHz) -1 3000 - 0.03 - 0.1 - 0.3 -1 0.1 - 0.001 - 0.003 - 0.01 - 0.03 - 0.1 - 0.3 -1 Collector current IC (A) Collector current IC (A) Collector current IC (A) ton, tstg, tf -- IC 100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=5(-IB1=IB2) VCC=-100V TC=25C tstg 3 1 tf 0.3 0.1 0.03 0.01 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 ton Area of safe operation (ASO) -10 -3 Non repetitive pulse TC=25C ICP -1 IC 1s t=1ms 10ms Switching time ton,tstg,tf (s) 10 Collector current IC (A) - 0.3 - 0.1 - 0.03 - 0.01 - 0.003 - 0.001 -1 -3 -10 -30 -100 -300 -1000 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 103 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink (1) 2SA1499 Thermal resistance Rth(t) (C/W) 102 10 (2) 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 This datasheet has been downloaded from: www..com Datasheets for electronic components. |
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