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DISCRETE SEMICONDUCTORS DATA SHEET BLU97 UHF power transistor Product specification August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 470 MHz band. FEATURES * multi-base structure and emitter-ballasting resistors for an optimum temperature profile. * gold metallization ensures excellent reliability. BLU97 The transistor has a 4-lead stud envelope with a ceramic cap (SOT122A). All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance up to Th = 25 C in a common-emitter class-B circuit MODE OF OPERATION narrow band; c.w. PIN CONFIGURATION VCE V 12,5 f MHz 470 PL W 7 Gp dB > 8,5 PINNING - SOT122A. PIN 1 2 handbook, halfpage C % > 55 DESCRIPTION collector emitter base emitter 4 1 3 3 4 2 Top view MBK187 Fig.1 Simplified outline. SOT122A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation at Tmb = 52 C f > 1 MHz; Tmb = 52 C Storage temperature Operating junction temperature Ptot(d.c.) Ptot(r.f.) Tstg Tj max. max. max. IC ICM max. max. VCBO VCEO VEBO max. max. max. BLU97 36 V 16 V 3V 1,2 A 3,6 A 17 W 22,5 W 200 C -65 to +150 C handbook, halfpage 10 MDA360 handbook, halfpage 40 MDA361 Ptot (W) IC (A) 30 III 1 Tmb = 52 C Th = 70 C II 20 I 10 10-1 1 10 VCE (V) 102 0 0 40 80 120 Th (C) 160 Rth mb-h = 0,6 K/W. I Continuous operation II Continuous operation (f > 1 MHz). III Short-time operation during mismatch (f > 1 MHz). Fig.2 D.C. SOAR. Fig.3 Power/temperature derating curves. THERMAL RESISTANCE Dissipation = 15 W; Tmb = 25 C From junction to mounting base (d.c. dissipation) (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 7,5 K/W 5,6 K/W 0.6 K/W August 1986 3 Philips Semiconductors Product specification UHF power transistor CHARACTERISTICS Tj = 25 C unless otherwise specified Collector-base breakdown voltage, open emitter; IC = 15 mA Collector-emitter breakdown voltage, open base; IC = 30 mA Emitter-base breakdown voltage, open collector; IE = 1,5 mA Collector cut-off current, VBE = 0; VCE = 16 V Second breakdown energy, L = 25 mH; f = 50 Hz; RBE = 10 D.C. current gain, IC = 0,9 A; VCE = 10 V Transition frequency at f = 500 MHz(1), -IE = 0,9 A; VCB = 12,5 V Collector capacitance at f = 1 MHz, IE = ie = 0; VCB = 12,5 V Feed-back capacitance at f = 1 MHz, IC = 0; VCE = 12,5 V Collector-stud capacitance Note 1. Measured under pulse conditions: tp = 50 s; < 1%. V(BR)CBO V(BR)CEO V(BR)EBO ICES ESBR hFE fT Cc Cre Ccs > > > < > > typ. typ. typ. typ. typ. BLU97 36 V 16 V 3V 7,5 mA 2,3 mJ 25 100 4,0 GHz 10 pF 7 pF 1,2 pF handbook, halfpage 120 MDA362 handbook, halfpage 4.8 MDA363 hFE fT (GHz) 3.2 80 40 1.6 0 0 0.8 1.6 2.4 IC (A) 3.2 0 0 0.8 1.6 2.4 -IE (A) 3.2 Fig.4 Tj = 25 C; VCE = 10 V; typical values. Fig.5 VCB = 12,5 V; f = 500 MHz; tp = 50 s; Tj = 25 C; typical values. August 1986 4 Philips Semiconductors Product specification UHF power transistor BLU97 handbook, halfpage 20 Cc MDA364 (pF) 16 12 8 4 0 0 4 8 12 16 20 VCB (V) Fig.6 IE = ie = 0; f = 1 MHz; typical values. APPLICATION INFORMATION R.F. performance in common-emitter circuit; class-B: f = 470 MHz; Th = 25 C MODE OF OPERATION narrow band; c.w. VCE V 12,5 PL W 7 < typ. PS W 0,99 0,55 > typ. Gp dB 8,5 < 11,0 typ. IC A 1,0 0,8 > typ. C % 55 70 handbook, full pagewidth C1 50 C2 C4 C3 ,, ,, L1 L3 T.U.T. ,, L6 C5 L4 L7 C8 50 C7 L5 C6 R2 L2 R1 +VCC MDA365 Fig.7 Class-B test circuit at f = 470 MHz. August 1986 5 Philips Semiconductors Product specification UHF power transistor List of components: C1 C2 C3 C4 C5 C6 L1 L2 L3 L5 L6 L7 R1 = 2,7 pF multilayer ceramic chip capacitor(1) = C7 = C8 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) = 7,5 pF multilayer ceramic chip capacitor(1) = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002) = 100 pF multilayer ceramic chip capacitor = 100 nF metallized film capacitor = 38 stripline (22,5 mm x 6,0 mm) = 15 nH; 1 turn Cu wire (1,0 mm); int. dia. 5 mm; leads 2 x 5 mm = L4 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) = 29 nH; 2 turns enamelled Cu wire (1,0 mm); int. dia. 6 mm; length 3,5 mm; leads 2 x 5 mm = 38 stripline (10,0 mm x 6,0 mm) = 7 nH; 1/2 turn Cu wire (1,0 mm); int. dia. 5,0 mm; leads 2 x 5 mm = R2 = 10 10%; 0,25 W metal film resistor BLU97 L1 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (r = 2,74); thickness 116 inch. Note 1. American Technical Ceramics capacitor type 100A or capacitor of same quality. August 1986 6 Philips Semiconductors Product specification UHF power transistor BLU97 handbook, full pagewidth 100 mm 58 mm rivets L3 R1 C1 C3 L2 L7 C2 L1 L6 C8 L5 C4 C6 C5 L4 C7 +VCC R2 MDA366 The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper serving as ground plane. Earth connections are made by hollow rivets and also by copper straps under the emitters. Fig.8 Printed circuit board and component lay-out for 470 MHz class-B test circuit. August 1986 7 Philips Semiconductors Product specification UHF power transistor BLU97 handbook, halfpage 10 PL MDA367 handbook, halfpage (W) 8 20 Gp (dB) 16 MDA368 100 C (%) 80 C 12 Gp 60 6 4 8 40 2 4 20 0 0 0.4 0.8 PS (W) 1.2 0 0 2 4 6 8 PL (W) 10 0 VCE = 12,5 V; f = 470 MHz; Th = 25 C; class-B operation; typical values. VCE = 12,5 V; f = 470 MHz; Th = 25 C; class-B operation; typical values. Fig.9 Load power vs. source power. Fig.10 Power gain and efficiency vs. load power. RUGGEDNESS The device is capable of withstanding a full load mismatch (VSWR = 50; all phases) at rated load power up to a supply voltage of 15,5 V and Th = 25 C. August 1986 8 Philips Semiconductors Product specification UHF power transistor BLU97 handbook, halfpage 3 MDA369 handbook, halfpage 8 MDA370 Zi () 2 ri ZL () 6 RL xi 1 4 0 2 -1 400 XL 440 480 520 560 600 f (MHz) 0 400 440 480 520 560 600 f (MHz) VCE = 12,5 V; PL = 7 W; f = 400-520 MHz; Th = 25 C; class-B operation; typical values. VCE = 12,5 V; PL = 7 W; f = 400-520 MHz; Th = 25 C; class-B operation; typical values. Fig.11 Input impedance (series components). Fig.12 Load impedance (series components). handbook, halfpage 16 MDA371 Gp (dB) 12 8 4 0 400 440 480 520 560 600 f (MHz) VCE = 12,5 V; PL = 7 W; f = 400-520 MHz; Th = 25 C; class-B operation; typical values. Fig.13 Power gain vs. frequency. August 1986 9 Philips Semiconductors Product specification UHF power transistor PACKAGE OUTLINE Studded ceramic package; 4 leads BLU97 SOT122A D ceramic BeO metal c A Q N1 D1 A w1 M A M W N D2 N3 X M1 H b detail X 4 L 3 H 1 2 0 5 scale 10 mm DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.85 5.58 c 0.18 0.14 D 7.50 7.23 D1 6.48 6.22 D2 7.24 6.93 H 27.56 25.78 L 9.91 9.14 M1 3.18 2.66 M 1.66 1.39 N 11.82 11.04 N1 max. 1.02 N3 3.86 2.92 Q 3.38 2.74 W 8-32 UNC w1 0.381 90 OUTLINE VERSION SOT122A REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-18 August 1986 10 Philips Semiconductors Product specification UHF power transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BLU97 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 11 |
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