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BFP360W
NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz
3 4
Junction temperature Ambient temperature Storage temperature
Thermal Resistance Parameter
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA
1
Junction - soldering point2)

2 1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFP360W
Maximum Ratings Parameter
Marking Pin Configuration FBs 1=E 2=C 3=E 4=B Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Symbol RthJS
Package SOT343
Value Unit
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1)
TS
6 15 15 2 35 4 210 150 -65 ... 150 -65 ... 150
Value
V
mA mW C
95C
Unit
260
K/W
Jun-16-2003
BFP360W
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter DC Characteristics Symbol min. Values typ. max. Unit
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO ICES ICBO IEBO hFE
6 60
9 130
10 100 1 200
V A nA A -
Collector-emitter cutoff current
VCE = 15 V, VBE = 0
Collector-base cutoff current
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 1 V, IC = 0
DC current gain
IC = 15 mA, VCE = 3 V
2
Jun-16-2003
BFP360W
Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. typ. max. AC Characteristics (verified by random sampling) Transition frequency fT I C = 15 mA, VCE = 3 V, f = 1 GHz
Unit
11 -
14 0.3 0.28 0.47 1
0.5 -
GHz pF
Collector-base capacitance
VCB = 5 V, f = 1 MHz, emitter grounded
Ccb Cce Ceb Fmin
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, base grounded
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, collector grounded
Noise figure
I C = 3 mA, V CE = 3 V, ZS = Z Sopt, f = 1.8 GHz
dB
Power gain, maximum stable 1)
I C = 15 mA, VCE = 3 V, Z S = Z Sopt, Z L = ZLopt, f = 1.8 GHz
Gms
-
17.5
-
dB
Power gain, maximum available 1)
I C = 15 mA, VCE = 3 V, Z S = Z Sopt, Z L = ZLopt, f = 3 GHz
Gma
-
12
-
dB
Transducer gain
I C = 15 mA, VCE = 3 V, Z S = Z L = 50 , f = 1.8 GHz I C = 15 mA, VCE = 3 V, Z S = Z L = 50 , f = 3 GHz
|S21e|2 IP3
dB 14 9.5 24 dBm
Third order intercept point at output 2)
VCE = 3 V, IC = 15 mA, f = 1.8 GHz, Z S = ZL = 50
-
1dB Compression point at output
I C = 15 mA, VCE = 3 V, Z S = Z L = 50, f = 1.8 GHz
1G = |S 1/2 ms 21e /S12e |, Gma = |S21e / S12e | (k-(k-1) )
P-1dB
-
9
-
2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
3
Jun-16-2003
BFP360W
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data:
fF ps mA V ns -
deg fF -
V fF V eV K
1
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit: L BI = L BO = L EI = L EO = L CI = L CO = C BE = C CB = C CE =
0.43 0.47 0.26 0.12 0.06 0.36 68 46 232
nH nH nH nH nH nH fF fF fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http//www.infineon.com/silicondiscretes
4
Jun-16-2003
m V
IS = VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = AF =
0.0689 20 2.4 60 1.4 7.31 400 9.219 1.336 0.864 1.92 0 0
fA V V -
BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = KF =
147 77.28 6 0.3 0.1 78.2 1.3 0.115 0 0.486 0 0 0.954 1E-14
mA A
NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = NK =
1 150 1 20 74 0.35 0.5 0.198 473 0.129 0.75 1.11 0.5
fA fA A

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