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SHINDENGEN Schottky Rectifiers (SBD) Single M1FS6 60 1.2A V FEATURES *oe Small SMT *oe Tj150*Z *oe Low VF=0.45V *oe PRRSM avalanche guaranteed APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommuniction Case : M1F Case : Unit : mm RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150 *Z Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage VRM 60 V Repetitive Peak Surge Reverse VoltagePulse width 0.5ms, duty 1/40 V RRSM 65 V Average Rectified Forward Current 50Hz sine wave, R-load Ta=25*Z*@On alumina substrate A IO 1.2 50Hz sine wave, R-load Ta=25*Z*@On glass-epoxy0.75 substrate Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z A 40 Repetitive Peak Surge Reverse Power Pulse width 10Es, Tj=25*Z PRRSM 60 W *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Forward Voltage VF IF =1.1A, Pulse measurement Reverse Current IR V=60V R , Pulse measurement Junction Capacitance R =10V Cj f=1MHz, V AEjl junction to lead Thermal Resistance AEja junction to ambient*@On alumina substrate junction to ambient*@On glass-epoxy substrate Ratings Unit Max.0.58 V Max.1.0 mA Typ.53 pF Max.20 Max.108 *Z/W Max.186 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd M1FS6 10 Forward Voltage Forward Current IF [A] Tl=150C [MAX] 1 Tl=150C [TYP] Tl=25C [MAX] Tl=25C [TYP] Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Forward Voltage VF [V] M1FS6 Junction Capacitance f=1MHz Tl=25C TYP Junction Capacitance Cj [pF] 100 10 0.1 1 10 Reverse Voltage VR [V] M1FS6 100 Reverse Current Tl=150C [MAX] Tl=150C [TYP] 10 Tl=125C [TYP] Reverse Current IR [mA] Tl=100C [TYP] 1 Tl=75C [TYP] 0.1 Pulse measurement per diode 0.01 0 10 20 30 40 50 60 Reverse Voltage VR [V] M1FS6 3.5 Reverse Power Dissipation Reverse Power Dissipation PR [W] 3 2.5 DC D=0.05 0.1 0.2 2 0.3 1.5 0.5 1 SIN 0.5 0.8 0 0 10 20 30 40 50 60 70 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T M1FS6 1.4 Forward Power Dissipation DC Forward Power Dissipation PF [W] 1.2 SIN 0.2 0.8 0.05 0.6 0.1 0.3 0.5 D=0.8 1 0.4 0.2 0 0 0.5 1 1.5 2 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T M1FS6 2.4 Derating Curve Average Rectified Forward Current IO [A] 2 DC D=0.8 Alumina substrate Soldering land 2mm Conductor layer 20m Substrate thickness 0.64mm 1.6 0.5 1.2 0.3 0.8 0.2 0.1 0.4 0.05 SIN 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 30V 0 0 IO VR tp D=tp /T T M1FS6 1.4 Derating Curve Average Rectified Forward Current IO [A] 1.2 DC D=0.8 Glass-epoxy substrate Soldering land 2mm Conductor layer 35m 1 0.8 0.5 SIN 0.6 0.3 0.4 0.2 0.1 0.2 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = 30V 0 0 IO VR tp D=tp /T T M1FS6 50 Peak Surge Forward Capability IFSM 10ms 10ms 1 cycle 40 Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 30 20 10 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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