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| STS15N4LLF3 N-channel 40V - 0.0042 - 15A - SO-8 STripFETTM Power MOSFET General features Type STS15N4LLF3 VDSS 40V RDS(on) <0.005 ID 15A Optimal RDS(on)x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced SO-8 Description This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique "Single Feature SizeTM" strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge. Internal schematic diagram Applications Switching application Order codes Part number STS15N4LLF3 Marking 15N4LLPackage SO-8 Packaging Tape & reel November 2006 Rev 2 1/12 www.st.com 12 Contents STS15N4LLF3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 STS15N4LLF3 Electrical ratings 1 Table 1. Symbol VDS VGS VGS ID ID IDM (2) (1) Electrical ratings Absolute maximim ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Gate- source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC = 100C Drain current (pulsed) Total dissipation at TC = 25C Single pulse avalanche energy Value 40 16 18 15 9.3 60 2.7 2 Unit V V V A A A W J PTOT EAS (3) 1. Guaranteed for test time < 15ms 2. Pulse width limited by Tjmax 3. Starting Tj =25C, ID =7.5A, VDD =25V Table 2. Symbol Thermal resistance Parameter Value 47 -55 to 150 -55 to 150 Unit C/W C C Rthj-pcb(1) Thermal resistance junction-pcb max Tl Tstg Maximum lead temperature for soldering Storage temperature 1. When mounted of FR-4 board with 1 inch2 pad, 2oz of Cu and t< 10sec 3/12 Electrical characteristics STS15N4LLF3 2 Electrical characteristics (TJ = 25 C unless otherwise specified) Table 3. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage Current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 250A, VGS= 0 VDS = max rating, VDS =max rating @125C VGS = 16V VDS= VGS, ID = 250A VGS= 10V, ID= 7.5A VGS= 4.5V, ID= 7.5A 1 0.0042 0.005 0.005 0.007 Min. 40 10 100 200 Typ. Max. Unit V A A nA V Table 4. Symbol Ciss Coss Crss Qg Qgs Qgd RG Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Gate input resistance Test conditions Min. Typ. 2530 574 29 21.5 6.9 8.2 1 3 28 Max. Unit pF pF pF nC nC nC VDS = 25V, f=1 MHz, VGS= 0 VDD = 20V, ID = 15A VGS = 4.5V (see Figure 13) f=1 MHz Gate DC Bias = 0 Test signal level = 20mV open drain 5 Table 5. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 20V, ID = 7.5A, RG = 4.7, VGS = 10V (see Figure 15) VDD = 20V, ID = 7.5A, RG = 4.7, VGS = 10V (see Figure 15) Min. Typ. 17 25 62 9 Max. Unit ns ns ns ns 4/12 STS15N4LLF3 Electrical characteristics Table 6. Symbol ISD ISDM(1) VSD (2) trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 15A, VGS = 0 ISD = 15A, VDD = 30V, di/dt = 100A/s, Tj = 150C (see Figure 14) 43 64 3 Test conditions Min. Typ. Max. 15 60 1.2 Unit A A V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5% 5/12 Electrical characteristics STS15N4LLF3 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Normalized BVDSS vs temperature Figure 6. Static drain-source on resistance 6/12 STS15N4LLF3 Figure 7. Gate charge vs gate-source voltage Figure 8. Electrical characteristics Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 7/12 Test circuit STS15N4LLF3 3 Test circuit Figure 13. Gate charge test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform 8/12 STS15N4LLF3 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: twww.st.com 9/12 Package mechanical data STS15N4LLF3 SO-8 MECHANICAL DATA DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm. MIN. TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 10/12 STS15N4LLF3 Revision history 5 Table 7. Date Revision history Revision history Revision 1 2 First release Corrected part number Changes 09-Jun-2006 22-Nov-2006 11/12 STS15N4LLF3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 |
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