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oH V SC AV ER OM AI SIO PL LA N IA BL S NT E
TISP4500H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
*R
TISP4500H3BJ Overvoltage Protector
Non-Conductive During K.20/21/45 Power Contact Test - Off-State Voltage ................................................... >245 V rms - For Controlled Environment ............................... 0 C to 70 C Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge
Device TISP4500H3BJ VDRM V @ 0 C 350 V(BO) V @ 70 C 500
SMBJ Package (Top View)
R1
2T
MD-SMB-004-a
Device Symbol
Rated for International Surge Wave Shapes
T
Wave Shape 2/10 10/250 10/700 10/1000
Standard GR-1089-CORE GR-1089-CORE ITU-T K.20/21/45 GR-1089-CORE
IPPSM A 500 230 200 100
R
SD-TISP4xxx-001-a
.............................................. UL Recognized Component
Description
This device is designed to limit overvoltages on the telephone line to 500 V over the temperature range. The minimum off-state voltage of 350 V allows a.c. power contact voltages of up to 245 V rms to occur without clipping. The combination of these two voltages gives protection for components having ratings of 500 V or above and ensures the protector is non-conducting for the ITU-T recommendations K.20/21/45 230 V rms power cross test condition (test number 2.3.1). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides.
How To Order
For Standard Termination Finish Order As For Lead Free Termination Finish Order As
TISP4500H3BJR-S Marking Code Std. Qty. 4500H3 3000
Device TISP4500H3BJ
Package SMB (DO-214AA)
Carrier
Embossed Tape Reeled TISP4500H3BJR
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex APRIL 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4500H3BJ Overvoltage Protector
Absolute Maximum Ratings, 0 C T A 70 C (Unless Otherwise Noted)
Rating Repetitive peak off-state voltage Non-repetitive peak on-state pulse current (see Notes 1 and 2) 2/10 (Telcordia GR-1089-CORE, 2/10 s voltage wave shape) 10/250 (Telcordia GR-1089-CORE, 10/250 s voltage wave shape) 10/700 (ITU-T K.20/21/45, 5/310 s current wave shape) 10/1000 (Telcordia GR-1089-CORE, 10/1000 s voltage wave shape) Non-repetitive peak on-state current (see Notes 1, 2 and 3) 50 Hz, 20 ms (1 cycle) 50 Hz, 1000 s Junction temperature Storage temperature range ITSM TJ Tstg 55 2.0 -40 to +150 -65 to +150 A C C TA = 25 C TA = 25 C TA = 25 C IPPSM 500 230 200 100 A Symbol VDRM Value 350 Unit V
NOTES: 1. Initially the device must be in thermal equilibrium. 2. The surge may be repeated after the device returns to its initial conditions. 3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths.
Electrical Characteristics, 0 C TA 70 C (Unless Otherwise Noted)
Parameter IDRM V(BO) V(BO) I(BO) IH ID Repetitive peak offstate current Breakover voltage Impulse breakover voltage Breakover current Holding current Off-state current VD = VDRM dv/dt = 250 V/ms, RSOURCE = 300 Test Conditions TA = 25 C TA = 70 C Min Typ Max 5 10 500 500 0.6 0.15 TA = 70 C 10 84 67 62 31 pF Unit A V V A A A
ITU-T recommendation K.44 (02/2000) Figure A.3-1/K.44 10/700 impulse generator Charge Voltage = 4 kV dv/dt = 250 V/ms, VD = 50 V f = 1 MHz, Vd = 1 V rms, VD = 0 f = 1 MHz, Vd = 1 V rms, VD = -1 V f = 1 MHz, Vd = 1 V rms, VD = -2 V f = 1 MHz, Vd = 1 V rms, VD = -50 V RSOURCE = 300 IT = 5 A, di/dt = -/+30 mA/ms
Coff
Off-state capacitance
Thermal Characteristics
Parameter Test Conditions EIA/JESD51-3 PCB, IT = ITSM(1000), RJA Junction to free air thermal resistance TA = 25 C, (see Note 5) 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 C 50 Min Typ Max 113 C/W Unit
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
APRIL 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4500H3BJ Overvoltage Protector
Parameter Measurement Information
+i IPPSM Quadrant I Switching Characteristic
ITSM
V(BO)
IH V(BR) I(BR) ID VD +v I(BO)
-v I(BR) V(BR) I(BO)
VD
ID
IH
V(BO)
ITSM Quadrant III Switching Characteristic IPPSM -i
PM4XAD
Figure 1. Voltage-current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal
APRIL 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4500H3BJ Overvoltage Protector
MECHANICAL DATA
Recommended Printed Wiring Land Pattern Dimensions
SMB Land Pattern
2.54 (.100)
2.40 (.094)
2.16 (.085)
DIMENSIONS ARE:
MM (INCHES)
MDXXBIB
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
Device TISP4500H3BJ
Symbolization Code 4500H3
APRIL 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4500H3BJ Overvoltage Protector
MECHANICAL DATA
SMBJ (DO-214AA) Plastic Surface Mount Diode Package
This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SMB
4.06 - 4.57 (.160 - .180)
3.30 - 3.94 (.130 - .155)
2
Index Mark (if needed)
DIMENSIONS ARE:
MM (INCHES)
2.00 - 2.40 (.079 - .094)
0.76 - 1.52 (.030 - .060)
1.90 - 2.10 (.075 - .083)
0.10 - 0.20 (.004 - .008)
1.96 - 2.32 (.077 - .091)
5.21 - 5.59 (.205 - .220)
MDXXBHAB
APRIL 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP4500H3BJ Overvoltage Protector
MECHANICAL DATA
Tape DImensions
SMB Package Single-Sprocket Tape
3.90 - 4.10 (.154 - .161)
1.55 - 1.65 (.061 - .065)
1.95 - 2.05 (.077 - .081)
1.65 - 1.85 (.065 - .073)
0.40 MAX. (.016)
5.54 - 5.55 (.215 - .219) 11.70 - 12.30 (.461 - .484) 8.20 MAX. (.323)
7.90 - 8.10 (.311 - .319)
O 1.50 MIN. (.059)
0 MIN.
Cover Tape
4.50 MAX. (.177)
Carrier Tape Direction of Feed Embossment 20
Maximium component rotation
Index Mark
DIMENSIONS ARE: MM (INCHES)
Typical component cavity center line Typical component center line
NOTES: A. The clearance between the component and the cavity must be within 0.05 mm (.002 in.) MIN. to 0.65 mm (.026 in.) MAX. so that the component cannot rotate more than 20 within the determined cavity. B. Taped devices are supplied on a reel of the following dimensions:Reel diameter: 330 3.0 mm (12.99 .118 in.) Reel hub diameter: 75 mm (2.95 in.) MIN. Reel axial hole: 13.0 0.5 mm (.512 .020 in.) C. 3000 devices are on a reel.
MDXXBJA
"TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries.
APRIL 2001 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.

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