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May 1994
NDP410A / NDP410AE / NDP410B / NDP410BE NDB410A / NDB410AE / NDB410B / NDB410BE N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
9 and 8A, 100V. RDS(ON) = 0.25 and 0.30. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum junction temperature rating. High density cell design (3 million/in) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS ID PD Drain-Source Voltage Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25C Derate above 25C TJ,TSTG TL
TC = 25C unless otherwise noted
NDP410A NDP410AE NDB410A NDB410AE 100 100 20 40 9 36 50 0.33
NDP410B NDP410BE NDB410B NDB410BE
Units V V V V
8 32
A A W W/C C C
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
-65 to 175 275
(c) 1997 Fairchild Semiconductor Corporation
NDP410.SAM
Electrical Characteristics (T
Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy
C
= 25C unless otherwise noted)
Conditions VDD = 25 V, ID = 9 A
Type NDP410AE NDP410BE NDB410AE NDB410BE
Min
Typ
Max 50 9
Units mJ A
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 A VDS = 100 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 4.5 A TJ = 125C VGS = 10 V, ID = 4 A TJ = 125C ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V ALL ALL TJ = 125C ALL ALL ALL TJ = 125C NDP410A NDP410AE NDB410A NDB410AE NDP410B NDP410BE NDB410B NDB410BE NDP410A NDP410AE NDB410A NDB410AE NDP410B NDP410BE NDB410B NDB410BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 4.5 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 9 2 1.4 2.9 2.3 0.2 0.38 100 250 1 100 -100 4 3.6 0.25 0.5 0.3 0.6 V A mA nA nA V V A
ON CHARACTERISTICS (Note 2)
8
A
3
4.8 385 80 20 500 100 30
S pF pF pF
Ciss Coss Crss
NDP410.SAM
Electrical Characteristics (T
Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
C
= 25C unless otherwise noted)
Conditions VDD = 50 V, ID = 9 A, VGS = 10 V, RGEN = 24
Type ALL ALL ALL ALL
Min
Typ 7.5 29 26 24 11.6 2.3 5
Max 20 50 45 45 17
Units nS nS nS nS nC nC nC
SWITCHING CHARACTERISTICS (Note 2)
VDS = 80 V, ID = 9 A, VGS = 10V
ALL ALL ALL NDP410A NDP410AE NDB410A NDB410AE NDP410B NDP410BE NDB410B NDB410BE
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 9 A
8
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
NDP410A NDP410AE NDB410A NDB410AE NDP410B NDP410BE NDB410B NDB410BE
36
A
32
A
VSD
(Note 2)
Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current
VGS = 0 V, IS = 4.5 A VGS = 0 V, IS = 9 A, dIS/dt = 100 A/s
ALL TJ = 125C ALL ALL
0.87 0.75 85 6
1.3 1.2 120 9
V V ns A
trr Irr RJC RJA
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 3 62.5 C/W C/W
Notes: 1. NDP410A/410B and NDB410A/410B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
NDP410.SAM
Typical Electrical Characteristics
16 2
V GS = 20V
1 21 0
I D , DRAIN-SOURCE CURRENT (A)
12
R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
8.0 7.0
V
1.8
GS
= 5V 6.0 7.0
1.6
6.0
8
1.4
8.0 10 12 20
1.2
4
5.0
1
0 0 2 4 6 VDS , DRAIN-SOURCE VOLTAGE (V) 8
0.8
0
4
8 ID , DRAIN CURRENT (A)
12
16
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage and Drain Current.
2.8
2.5
I D = 4.5A
DRAIN-SOURCE ON-RESISTANCE DRAIN-SOURCE ON-RESISTANCE 2.4
V
GS
= 10V T = 125C J
V
GS = 10V
2
R DS(ON), NORMALIZED
2
R DS(on), NORMALIZED
1.5
1.6
25C
1
1.2
-55C
0.5
0.8
0.4 -50
-25
0
25 50 75 100 125 TJ , JUNCTION TEMPERATURE (C)
150
175
0 0 4 8 I D , DRAIN CURRENT (A) 12 16
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Drain Current and Temperature.
10 V th , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE (V)
1.2
V DS = 10V
8 I D, DRAIN CURRENT (A)
T
J
= -55C
25
125
V DS = V
1.1
GS
I D = 250A
1
6
0.9
4
0.8
2
0.7
0 2 3 V
GS
4
5
6
7
8
0.6 -50
-25
0
, GATE TO SOURCE VOLTAGE (V)
25 50 75 100 125 T , JUNCTION TEMPERATURE (C)
J
150
175
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with Temperature.
NDP410.SAM
Typical Electrical Characteristics (continued)
1.06 DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
I D = 250A
1.04
15 10 I S , REVERSE DRAIN CURRENT (A)
V GS = 0V TJ = 125C 25C
BV DSS , NORMALIZED
1.02
1
-55C
1
0.1
0.98
0.96 -50
-25
0 T
J
25 50 75 100 125 , JUNCTION TEMPERATURE (C)
150
175
0.01 0.2
0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 7. Breakdown Voltage Variation with Temperature.
Figure 8. Body Diode Forward Voltage Variation with Current and Temperature.
20
1000 500 CAPACITANCE (pF)
V GS , GATE-SOURCE VOLTAGE (V)
I D = 9A
V DS = 20V
C iss
50 80
15
200 100 50
C oss
10
20 10 0.1
f = 1 MHz VGS = 0V
0.2
C rss
5
0
0.5 1 2 5 10 20 VDS , DRAIN TO SOURCE VOLTAGE (V)
50
0
5
10 Q g , GATE CHARGE (nC)
15
20
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
VDD
t d(on)
t on tr
90%
t off t d(off)
90%
tf
V IN
D
RL V OUT
DUT
Output, Vout
VGS
10%
10% 90%
R GEN
Inverted
G
Input, Vin
S
10%
50%
50%
Pulse Width
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP410.SAM
Typical Electrical Characteristics (continued)
8 , TRANSCONDUCTANCE (SIEMENS)
V
6
DS
= 10V T J = -55C 25C 125C
VGS = 10V
L tp
+ VDD -
4
t p is adjusted to reach the desired peak inductive current, I L . tp IL
BV DSS
2
FS
VDD
g 0 0 2 I
D
4 6 , DRAIN CURRENT (A)
8
10
Figure 13. Transconductance Variation with Drain Current and Temperature.
Figure 14. Unclamped Inductive Load Circuit and Waveforms.
50
10
) Lim it
s
I D , DRAIN CURRENT (A)
10 5
RD
S(
ON
10 1m 10 ms
0
s
s
2 1 0.5 1
V GS = 20V SINGLE PULSE T C = 25C
DC
2
3
5 10 20 50 VDS , DRAIN-SOURCE VOLTAGE (V)
100 150
Figure 15. Maximum Safe Operating Area.
1 TRANSIENT THERMAL RESISTANCE 0.5 0.3
0.2 D = 0.5
r(t), NORMALIZED EFFECTIVE
0.2
0.1
R JC (t) = r(t) * RJC R = 3.0 C/W JC
0.1
0.05 P(pk)
0.05 0.03 0.02
0.02 0.01 Single Pulse
t1
t2
TJ - T C = P * R JC (t) Duty Cycle, D = t1 /t2 0.05 0.1 0.2 0.5 1 2 5 t 1 ,TIME (ms) 10 20 50 100 200 500 1000
0.01 0.01
0.02
Figure 16. Transient Thermal Response Curve.
NDP410.SAM

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