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| MSC80915 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC80915 is Designed for Class A, Common Emitter Applications to 2.3 GHz. PACKAGE STYLE .250 2L FLG A OD C E .060 x 45 CHAMFER B FEATURES INCLUDE: * Gold Metalization * Emitter Ballasting G L H J F I K M NP MAXIMUM RATINGS IC VCC PDISS TJ TSTG JC O O DIM A B C D MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 300 mA 20 V 5.0 W @ TC = 25 C -55 C to +200 C -55 C to +200 C 35 C/W O O O O .255 / 6.48 .132 / 3.35 E F G H I J K L M N P .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICEO hFE Cob Pg P1db IC = 1.0 mA IC = 5.0 mA IE = 1.0 mA VCB = 18 V VCE = 5.0 V VCB = 28 V VCE = 18 V TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 50 20 3.5 0.5 UNITS V V V mA --pF dB dBm IC = 100 mA f = 1.0 MHz IC = 140 mA fo = 2.0 GHz 15 85 120 3.0 7.5 +28 8.5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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