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74ALS10 3323P DSPIC3 AX150 NTE71 V2010 BSS8402 21002
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  Datasheet File OCR Text:
 LL60/LL60P
Schottky Barrier Diodes
Schottky Barrier Diode 30-50 mAMPERES 40-45 VOLTS
Features: *Silicon Epitaxial Planner Diode *Low Reverse Current and Low Forward Voltage *Low Current Rectification and High Speed Switching *High Reliability *Used in Recorder, Radio, TV, Telephone as Detectors Mechanical Data: *Case : MINI-MELF Glass Case (SOD-80) *Polarity: Color Band Denotescathode Band *Weight : Approx 0.05 gram
MINI-MELF
MINI-MELF Outline Dimensions
Unit:mm
A B C
MINI MELF
Dim A B C Min 3.30 1.30 0.28 Max 3.70 1.60 0.50
http//www.weitron.com.tw
WEITRON
LL60/LL60P
Maximum Ratings (
Characteristic
Pepetitive Peak Reverse Voltage Non-Repetitive Peak Forward Surge Current @t=1S Forward Continuous Current, TA =25 C Operating and Strorage Temperature Range
TA=25 C Unless otherwise noted)
Symbol
VRRM IFSM IF TJ , TSTG
LL60
40 150 30 -65 to +125
LL60P
45 500 50
Unit
V mA mA C
Electrical Characteristics
Characteristic
Forward Voltage IF=1 mA IF=30 mA IF=200 mA Rverse Current VR=15V LL60 LL60P LL60 LL60P
( TA=25 C Unless otherwise noted) Symbol
VF
Min
-
Tpy
0.32 0.24 0.65 0.65
Max
0.5 0.5 1.0 1.0
Unit
V
IR LL60 LL60P Cj Trr 0.1 0.5 2.0 6.0 0.5 1.0 1.0
uA
Junction Capacitance LL60 VR=1V, f=1MHz LL60P VR=10V, f=1MHz Reverse Recovery Time IF=I R=1mA , Irr=1 mA, Rc=100
PF
nS
http//www.weitron.com.tw
WEITRON
LL60/LL60P
250 200
IF(mA)
0.70 0.60 0.50
LL6
IR(UA)
LL
60
P
150 100 50
0P
LL6
0
0.40 0.30
LL
0.20 0.10 0.2 0.4
VF(V)
0
0.6
0.8
1.0
0
5
10
15
VR(V)
20
60
25
30
FIG.1 Fowrad Current vs. Forward Voltage
FIG.2 Reverse Current vs. Continuous Reverse Votlage
8 7 6 5
C J (pF)
LL6
0P
4 3 2 1 0 2 4 6
VF(V)
LL60
8
10
12
FIG.3 Junction Capacitance vs. Continuous Reverse Applied Voltage
http//www.weitron.com.tw
WEITRON


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