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| LESHAN RADIO COMPANY, LTD. General purpose PIN diode BAP51 - 02 FEATURES * Low diode capacitance * Low diode forward resistance. APPLICATIONS * General RF applications. DESCRIPTION General purpose PIN diode in a SOD523 small SMD plastic package. 2 1 SOD523 SC-79 1 CATHODE 2 ANODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VR I IF P tot T stg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature CONDITIONS MIN. - - - -65 -65 MAX. 60 50 715 +150 +150 UNIT V mA mW C C T s =90C ELECTRICAL CHARACTERISTICS T j = 25C unless otherwise specified. SYMBOL VF VR IR Cd PARAMETER forward voltage reverse voltage reverse current diode capacitance CONDITIONS I F =50 mA I R =10mA V R =50 V V R = 0; f = 1 MHz V R = 1 V; f = 1 MHz V R = 5 V; f = 1 MHz r D diode forward resistance I F = 0.5 mA; f = 100 MHz; note 1 I F = 1 mA; f = 100 MHz; note 1 I F = 10 mA; f = 100 MHz; note 1 Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering-point VALUE 85 UNIT K/W MIN - 50 - - - - - - - TYP. 0.95 - - 0.4 0.3 0.2 5.5 3.6 1.5 MAX. 1.1 - 100 - 0.55 0.35 9 6.5 2.5 UNIT V V nA pF pF pF S24-1/2 LESHAN RADIO COMPANY, LTD. BAP51-02 10 f = 100 MHz; T j =25C 500 400 5 300 C d (pF) 2 r D( ) 200 100 1 10 -1 1 10 0 0 f = 1 MHz; T j =25C 4 8 12 16 20 I F (mA ) VR(V) Fig.1 Forward resistance as a function of forward current; typical values. Fig.2 Diode capacitance as a function of reverse voltage; typical values. 0 0 -0.5 -5 (1) I F =10 mA. (2) I F = 1 mA. (3) I F = 0.5 mA. |s 21| 2(dB) |s 21| 2(dB) -1 -10 -1.5 -15 -2 Diode inserted in series with a 50 stripline circuit and biased via the analyzer Tee network. Tamb =25C. -20 Diode zero biased and inserted in series with a 50 stripline circuit. Tamb =25C. -2.5 0.5 1 1.5 2 2.5 3 -25 0.5 1 1.5 2 2.5 3 f (GHz ) f (GHz ) Fig.3 Insertion loss ( |s 21| 2 ) of the diode in on-state as a function of frequency; typical values. Fig.4 Isolation ( |s 21| 2 ) of the diode in off-state as a function of frequency; typical values. S24-2/2 |
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