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AON3402 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Standard Product AON3402 is Pb-free (meets ROHS & Sony 259 specifications). AON3402L is a Green Product ordering option. AON3402 and AON3402L are electrically identical.
DFN 3x3 Top View Bottom View
Features
VDS (V) = 20V ID = 12A (VGS = 4.5V) RDS(ON) < 13m (VGS = 4.5V) RDS(ON) < 17m (VGS = 2.5V) RDS(ON) < 26m (VGS = 1.8V) ESD Rating: 2000V HBM
D
D
D
D
D
S S S G
D D D D S G
G
S
S
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum 20 12 12 9.6 40 3 1.9 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 32 65 25
Max 42 100 35
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AON3402
Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=16V, V GS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, IG=250uA VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=12A TJ=125C 12 0.5 40 Min 20 10 25 10 0.78 10.3 14.4 14.3 21.7 37 0.73 1 13 18 17 26 1 4.8 Typ Max Units V A A V V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
Static Drain-Source On-Resistance
gFS VSD IS
VGS=2.5V, ID=10.5A VGS=1.8V, ID=8.5A Forward Transconductance VDS=5V, ID=9.8A Diode Forward Voltage IS=1A,V GS=0V Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge
VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
1810 232 200 1.6 17.9 1.5 4.7 2.5 7.2 49 10.8 20.2 8
VGS=4.5V, VDS=10V, ID=9.8A
VGS=10V, V DS=10V, R L=1.0, RGEN=3 IF=9.8A, dI/dt=100A/s IF=9.8A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 0: April 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AON3402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40 35 30 25 ID (A) 20 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 25 VGS=1.8V 20 RDS(ON) (m) VGS=2.5V 15 VGS=4.5V 10 Normalized On-Resistance 1.4 1.6 VGS=4.5V ID=12A VGS=2.5V ID=10.5A VGS=1.8V ID=8.5A 1 VGS=1.5V 5 0 0 0.5 25C 1 1.5 2 VGS(Volts) Figure 2: Transfer Characteristics 2.5 ID(A) 20 15 10 125C 10 2.5V 4.5V 30 2V 25 VDS=5V
1.2
5 0 5 10 15 20 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 ID=12A 1.0E+00 1.0E-01 IS (A) 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 40 35 30 RDS(ON) (m) 25 20 15 10 5 0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 125C
125C
Alpha & Omega Semiconductor, Ltd.
AON3402
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 3000 VDS=10V ID=12A Capacitance (pF) 2500 2000 1500 1000 500 0 0 Coss Crss 5 10 15 20 Ciss
VDS (Volts) Figure 8: Capacitance Characteristics
100.0
40 RDS(ON) limited
Power (W)
ID (Amps)
10.0
100s 1ms 10ms
10s
TJ(Max)=150C TA=25C
30
20
1.0 TJ(Max)=150C TA=25C 0.1 0.1 1
1s
0.1s
10s DC 10 VDS (Volts) 100
10
0 0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=42C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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