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| AO3422 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12V. This device is suitable for use as a load switch. Standard product AO3422 is Pb-free (meets ROHS & Sony 259 specifications). AO3422L is a Green Product ordering option. AO3422 and AO3422L are electrically identical. Features VDS (V) = 55V ID = 2.1A (VGS = 4.5V) RDS(ON) < 160m (VGS = 4.5V) RDS(ON) < 200m (VGS = 2.5V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25C Current A TA=70C ID Pulsed Drain Current B Maximum 55 12 2.1 1.7 10 1.25 0.8 -55 to 150 Units V V A IDM PD TJ, TSTG TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C W C Symbol t 10s Steady-State Steady-State RJA RJL Typ 75 115 48 Max 100 150 60 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO3422 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Source leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=2.5V, ID=1.5A Forward Transconductance VDS=5V, ID=2.1A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current Conditions ID=10mA, VGS=0V VDS=44V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=2.1A TJ=125C 0.6 10 1.3 125 175 157 11 0.78 Min 55 1 5 100 2 160 210 200 1 1 300 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 214 31 12.6 1.3 2.6 0.6 0.8 2.3 2.4 16.5 2 20 17 3 3.3 VGS=4.5V, VDS=27.5V, ID=2.1A VGS=10V, VDS=27.5V, RL=12, RGEN=3 IF=2.1A, dI/dt=100A/s IF=2.1A, dI/dt=100A/s 30 A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev0: Oct 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10V 8 5V 6 ID (A) 4 2 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region characteristics 200 Normalized On-Resistance 180 RDS(ON) (m) VGS=2.5V 160 140 120 VGS=4.5V 100 0 1 2 3 4 5 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1E+01 360 310 RDS(ON) (m) 260 210 160 110 60 10 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C ID=2.3A IS (A) 1E+00 125C 1E-01 1E-02 1E-03 1E-04 25C 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=2.5V VGS=4.5 VGS=2V 2 25C 0 1 1.25 1.5 1.75 2 2.25 2.5 VGS(Volts) Figure 2: Transfer Characteristics ID(A) 2.5V 3.5V 6 VDS=5V 8 4 125C Alpha & Omega Semiconductor, Ltd. AO3422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 0 0 1 2 3 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=27.5V ID=2.1A 400 360 320 Capacitance (pF) 280 240 200 160 120 80 40 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss Ciss 100.0 RDS(ON) limited ID (Amps) 10.0 100s 0.1s 1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 10ms TJ(Max)=150C TA=25C Power (W) 15 TJ(Max)=150C TA=25C 10 1ms 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=100C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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