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| Si5402DC Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) () 0.035 @ VGS = 10 V 0.055 @ VGS = 4.5 V ID (A) 6.7 5.3 1206-8 ChipFETt 1 D D D D S D D G D G Marking Code AA XX Lot Traceability and Date Code Bottom View Part # Code S N-Channel MOSFET Ordering Information: SI5402DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs 30 20 6.7 4.8 20 2.1 2.5 1.3 Steady State Unit V 4.9 3.5 1.1 1.3 0.7 --55 to 150 260 W A _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) t 5 sec Steady State Steady State Symbol RthJA RthJF Typical 40 80 15 Maximum 50 95 20 Unit _C/W C/ Notes a. Surface Mounted on 1" x 1" FR4 Board. b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71062 S-21251--Rev. C, 05-Aug-02 www.vishay.com 2-1 |
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