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| KSD985/986 KSD985/986 Low Frequency Power Amplifier * Low Speed Switching Industrial Use 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Volage : KSD985 : KSD986 VEBO IC ICP IB PC PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (Ta=25C) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature 60 80 8.0 1.5 3.0 0.15 1.0 10 150 - 55 ~ 150 V V V A A A W W C C Value 150 Units V * PW300s, Duty Cycle10% Electrical Characteristics TC=25C unless otherwise noted Symbol ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 VCE(sat) VBE(sat) tON tSTG tF Parameter Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Test Condition VCB = 60V, IE = 0 VCE = 60V, RBE = 51 @ TC = 125C VCE = 60V, VBE(off) = -1.5A VCE = 60V, VBE(off) = -1.5A @ TC = 125C VEB = 5V, IC = 0 VCE = 2V, IC = 0.5A VCE = 2V, IC = 1A IC = 1A, IB = 1mA IC = 1A, IB = 1mA VCC = 50V, IC = 1A IB1 = - IB2 = 1mA RL = 50 0.5 1.0 1.0 1000 2000 Min. Typ. Max. 10 1.0 10 1.0 1.0 30000 1.5 2.0 V V s s s Units A mA A mA mA Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Turn ON Time Storage Time Fall Time * Pulse Test: PW350s, Duty Cycle2% hFE Classification Classification hFE2 R 2000 ~ 5000 O 4000 ~ 10000 Y 8000 ~ 30000 (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSD985/986 Typical Characteristics 2.0 IB = 220uAIB = 200uA I = 160uA IB = 180uA B IB = 140uA 10000 VCE = 2V IC[A], COLLECTOR CURRENT 1.6 1.2 IB = 100uA hFE, DC CURRENT GAIN 5.0 IB = 120uA 1000 0.8 IB = 80uA 0.4 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 100 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 160 IC = 1000 IB 140 dT(%), IC DERATING 120 VBE(sat) 100 1 80 S/b L im ite d 60 Di ss ip V CE(sat) 40 at ion Li m 20 ite d 0.1 0.1 0 1 10 0 25 50 o 75 100 125 150 175 200 IC[A], COLLECTOR CURRENT TC[ C], CASE TEMPERATURE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Derating Curve Of Safe Operating Areas 2.50 2.25 10 u 30 IC[A], COLECTOR CURRENT 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 0 10 20 30 40 50 60 70 80 90 100 IC[A], COLLECTOR CURRENT 1 D is si p a t io nL i mi 3m s DC 30 0 1m us s 0 10 s us te d b S/ m Li 0.1 d it e 0.01 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Reverse Bias Safe Operating Areas Figure 6. Safe Operating Area (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSD985/986 Typical Characteristics (Continued) 16 14 PC[W], POWER DISSIPATION 12 10 8 6 4 2 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 7. Power Derating (c)2000 Fairchild Semiconductor International Rev. A, February 2000 KSD985/986 Package Demensions TO-126 0.10 3.90 8.00 0.30 3.25 0.20 14.20MAX o3.20 0.10 11.00 0.20 (1.00) 0.75 0.10 1.60 0.10 0.75 0.10 0.30 (0.50) 1.75 0.20 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 13.06 16.10 0.20 0.50 -0.05 +0.10 Dimensions in Millimeters (c)2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM DISCLAIMER HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2000 Fairchild Semiconductor International Rev. E |
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