 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SC5824 Transistor Power transistor (60V, 3A) 2SC5824 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2071. !External dimensions (Units : mm) MPT3 1.0 1.5 0.4 4.0 2.5 0.5 (1) (2) 3.0 0.5 (3) 1.5 0.4 1.6 !Applications NPN Silicon epitaxial planar transistor (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) 0.4 Each lead has same dimensions Abbreviated symbol : UP !Structure Low frequency amplifier High speed switching !Packaging specifications Package Type Code Basic ordering unit (pieces) 2SC5824 Taping T100 1000 !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP PC Power dissipation PC Junction temperature Range of storage temperature 1 Pw=100ms 2 Each terminal mounted on a recommended land. 3 Mounted on a 40x40x0.7(mm) ceramic substrate Limits 60 60 6 3 6 500 2.0 150 -55~+150 Unit V V V A A mW W C C 1 2 3 Tj Tstg 1.5 4.5 1/3 2SC5824 Transistor !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Symbol BVCBO Min. 60 60 6 - - - 120 - - - - - Typ. - - - - - 200 - 200 20 50 150 30 Max. - - - 1.0 1.0 500 390 - - - - - Unit V V V A A mV - MHz pF ns ns ns IC=100A IC=1mA IE=100A VCB=40V VEB=4V IC=2A, IB=200mA 1 Conditions Collector-emitter breakdown voltage BVCEO Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time BVEBO ICBO IEBO VCE(sat) hFE fT Cob Ton Tstg Tf VCE=2V, IC=100mA VCE=10V, IE= -100mA, f=10MHz 1 VCB=10V, IE=0mA, f=1MHz IC=3A, IB1=300mA IB2= -300mA VCC 25V 2 1 Non repetitive pulse 2 See switching charactaristics measurement circuits !hFE RANK Q 120-270 R 180-390 !Electrical characteristic curves 10 1000 1000 Ta=25C VCC=25V IC/IB=10/1 VCE=2V 1ms COLLECTOR CURRENT : IC (A) 100ms Tstg DC CURRENT GAIN : hFE SWITCHING TIME (ns) 1 100 Ta= -40C DC 10ms Ta=25C 100 Ton Ta=100C 10 0.1 Ta=125C Tf Single non repoetitive pulse 0.01 0.1 1 10 100 10 0.01 0.1 1 10 1 0.001 0.01 0.1 1 10 COLLECTOR EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Safe operating area 1000 Fig.2 Switching Time 10 Fig.3 DC current gain vs. collector current 10 Ta=25C Ta=25C IC/IB=10/1 COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) VCE=5V DC CURRENT GAIN : hFE Ta=125C 100 VCE=3V 1 COLLECTOR SATURATION VOLTAGE : VCE (sat)(V) Ta=100C 1 10 VCE=2V 0.1 Ta=25C Ta= -40C 0.1 IC/IB=20/1 IC/IB=10/1 1 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage vs. collector current vs. Collector Current 2/3 2SC5824 Transistor 10 IC/IB=10/1 TRANSITION FREQUENCY : FT (MHz) 10 VCE=2V 1000 Ta=25C VCE=10V BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) COLLECTOR CURRENT : IC (A) Ta=125C 1 Ta=100C Ta= -40C Ta= -40C Ta=25C 100 1 0.1 Ta=25C 10 Ta=125C Ta=100C 0.1 0.001 0.01 0.01 0.1 1 10 0 0.5 1 1.5 2 1 -0.001 -0.01 -0.1 -1 -10 COLLECTOR CURRENT : IC (A) BASE TO EMITTER VOLTAGE : VBE (V) EMITTER CURRENT : IE (A) Fig.7 Base-emitter saturation voltage vs. collector current Fig.8 Ground emitter propagation characteristics Fig.9 Transition frequency COLLECTOR OUTPUT CAPACITANCE : CoB (pF) 100 Ta=25C f=1MHz 10 1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Collector output capacitance !Switching characteristics measurement circuits RL=8.3 VIN IB1 IC VCC 25V IB2 1% PW PW 50 S Duty cycle IB1 Base current waveform 90% Collector current waveform Ton IC 10% Tstg Tf IB2 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0 |
Price & Availability of 2SC5824
 |
||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |
