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E2Q0040-38-71 electronic components
This version: Jul. 1998 Previous version: Jan. 1998 KGF1322
electronic components KGF1322
Power FET (Ceramic Package Type)
GENERAL DESCRIPTION
The KGF1322, housed in a ceramic package with integrated heat sink, is a discrete UHF-band power FET that features high efficiency, high output power, and low current operation. The KGF1322 specifications are guaranteed to a fixed matching circuit for 5.8 V and 850 MHz; external impedance-matching circuits are also required. Because of its high efficiency, high output power (more than 33 dBm), and low thermal resistance, the KGF1322 is ideal as a transmitter-final-stage amplifier for personal handy phones, such as digital cellular phones.
FEATURES
* High output power: 33 dBm (min.) * High efficiency: 60% (min.) * Low thermal resistance: 12C/W (typ.) * Package: 3PHTP
PACKAGE DIMENSIONS
1.70.2
0.50.05
4.70.15
5.9 MAX
4.50.15
0.630.15 1.10.15 3.10.15
0.1250.05
2.30.05 3.30.15 7.30.15 (Unit: mm)
Package material Lead frame material Pin treatment plate thickness Al203 Fe-Ni-Co alloy Ni/Au plating Au:1.0 mm or more
3.50.05
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electronic components
KGF1322
MARKING
(1)
(2)
K1322 XXXX
PRODUCT NAME LOT NUMBER
MONTHLY LOT NUMBER (3) PRODUCTION MONTH (1-9,X,Y,Z) PRODUCTION YEAR (LOWEST DIGIT) (1) Gate (2) Source (3) Drain
CIRCUIT
Drain(3)
Gate(1)
Source(2)
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electronic components
KGF1322
ABSOLUTE MAXIMUM RATINGS
Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Condition Ta = 25C Ta = 25C Ta = 25C Ta = Tc = 25C -- -- Unit V V A W C C Min. -- -6.0 -- -- -- -45 Max. 10 0.4 3 5 150 125
ELECTRICAL CHARACTERISTICS
(Ta = 25C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Gate-source cut-off voltage Output power Drain efficiency Thermal resistance Symbol IGSS IGDO IDS(off) IDSS VGS(off) PO hD Rth Condition VGS = -6 V VGD = -16 V VDS = 10 V, VGS = -6 V VDS = 1.5 V, VGS = 0 V VDS = 3 V, IDS = 4 mA (*1), PIN = 22 dBm (*1), PIN = 22 dBm Channel to case Unit mA mA mA A V dBm % C/W Min. -- -- -- 2.0 -3.6 33.0 60 -- Typ. -- -- -- -- -- -- -- 12 Max. 0.1 0.5 1.5 -- -2.6 -- -- --
*1 Condition: f = 850 MHz, VDS = 5.8 V, IDSQ = 240 mA
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electronic components
KGF1322
RF CHARACTERISTICS
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electronic components Typical S Parameters
KGF1322
VDS = 5.8 V, IDS = 240 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 0.941 0.939 0.939 0.937 0.937 0.935 0.933 0.932 0.930 0.930 0.926 0.925 0.920 0.921 0.915 0.916 0.913 0.909 0.907 0.904 0.903 0.900 0.897 0.895 0.891 0.887 -151.20 -157.04 -161.53 -165.06 -167.96 -170.53 -172.69 -174.68 -176.46 -178.20 -179.81 178.70 177.39 175.86 174.46 173.22 171.70 170.64 169.24 167.93 166.79 165.54 164.25 163.01 161.64 160.49 3.945 3.325 2.878 2.542 2.273 2.052 1.869 1.731 1.602 1.501 1.406 1.322 1.256 1.181 1.132 1.077 1.036 0.992 0.953 0.918 0.887 0.853 0.830 0.799 0.781 0.755 95.29 90.96 86.91 83.63 80.53 77.50 75.04 72.26 70.02 67.31 64.99 62.62 60.34 58.29 55.93 53.69 51.72 49.37 47.61 45.18 43.47 41.07 39.39 37.42 35.16 33.63 0.032 0.033 0.034 0.035 0.035 0.036 0.037 0.038 0.038 0.039 0.040 0.041 0.042 0.043 0.044 0.045 0.046 0.047 0.048 0.049 0.051 0.051 0.053 0.053 0.054 0.053 24.38 23.33 22.90 22.86 23.33 23.14 23.63 23.81 24.52 24.26 24.96 25.06 25.40 25.57 25.34 25.63 25.70 25.35 25.72 25.16 25.17 24.40 23.73 23.10 21.96 22.01 0.697 0.699 0.702 0.702 0.704 0.702 0.703 0.703 0.703 0.702 0.702 0.700 0.701 0.698 0.698 0.698 0.696 0.696 0.693 0.693 0.686 0.689 0.685 0.688 0.686 0.693 -176.88 -178.02 -178.91 -179.73 179.81 178.93 178.55 177.88 177.60 176.77 176.48 175.79 175.46 174.77 174.66 173.77 173.63 172.90 172.71 172.00 171.74 171.27 171.07 170.79 170.71 170.54
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electronic components Typical S Parameters
KGF1322
VDS = 5.8 V, IDS = 240 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W
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