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IRFY9230
MECHANICAL DATA Dimensions in mm (inches)
10.41 (0.410) 10.67 (0.420) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045)
P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
VDSS ID(cont) RDS(on)
-
16.38 (0.645) 16.89 (0.665)
13.38 (0.527) 13.64 (0.537)
3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430)
123
12.07 (0.500) 19.05 (0.750)
200V - 6.5A 0.80
0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC
FEATURES
* HERMETICALLY SEALED TO-257AA METAL PACKAGE * SIMPLE DRIVE REQUIREMENTS * LIGHTWEIGHT * SCREENING OPTIONS AVAILABLE * ALL LEADS ISOLATED FROM CASE
TO-257AA - Metal Package
Pad 1 - Gate Pad 2 - Drain Pad 3 - Source
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
VGS ID ID IDM PD TJ , Tstg RJC Gate - Source Voltage Continuous Drain Current @ Tcase = 25C Continuous Drain Current @ Tcase = 100C Pulsed Drain Current Power Dissipation @ Tcase = 25C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case 20V - 6.5A - 4.0A - 28A 75W 0.6W/C - 55 to 150C 1.67C/W max.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3280 Issue 1
IRFY9230
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise stated)
Parameter
BVDSS TJ RDS(on) STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Breakdown Voltage Static Drain - Source On-State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Test Conditions
VGS = 0 ID = 1mA VGS = -10V VGS = -10V VDS = VGS VDS -15V VGS = 0 VGS = - 20V VGS = - 20V VGS = 0 VDS = 25V f = 1MHz VGS = - 10V ID = - 6.5A VDS = - 0.5BVDSS VDD = - 100V ID = - 6.5A RG = 7.5 ID = - 6.5A VDS = - 0.5BVDSS ID = - 4.0A ID = - 6.5A ID = - 250A IDS = - 4A VDS = - 0.8BVDSS TJ = 125C ID = 1mA
Min.
- 200
Typ.
Max.
Unit
V
BVDSS Temperature Coefficient of
Reference to 25C
- 0.2 0.80 0.92 -2 2 - 25 - 250 - 100 100 700 200 40 31 7 17 50 100 100 80 - 6.5 - 28 -4
V / C V S( A nA )(
VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr LD LS
pF
nC nC
ns
SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Pulse Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge PACKAGE CHARACTERISTICS Internal Drain Inductance Internal Source Inductance IS = - 6.5A VGS = 0 IS = - 6.5A TJ = 25C di / dt 100A/s VDD - 50V
(from 6mm down drain lead pad to centre of die)
A V ns C
TJ = 25C
-6 400 4 8.7 8.7
nH
(from 6mm down source lead to centre of source bond pad)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3280 Issue 1

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