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2SC454
Silicon NPN Epitaxial
Application
High frequency amplifier, mixer
Outline
TO-92 (2)
1. Emitter 2. Collector 3. Base 3 2 1
2SC454
Absolute Maximum Ratings (Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 30 30 5 100 200 150 -55 to +150 Unit V V V mA mW C C
Electrical Characteristics (Ta = 25C)
Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 30 5 -- --
1
Typ -- -- -- -- -- -- 0.63 -- 230 -- -- 35
Max -- -- -- 0.5 0.5 500 0.75 0.2 -- 3.5 25 --
Unit V V V A A
Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA
Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Collector output capacitance Noise figure IF power gain V(BR)EBO I CBO I EBO hFE* VBE VCE(sat) fT Cob NF IFG
100 -- -- -- -- -- --
V V MHz pF dB dB
VCE = 12 V, IC = 2 mA I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, f = 1 kHz, Rg = 500 VCE = 12 V, IC = 1 mA, f = 455 kHz, Rg = 1.5 k, RL = 40 k
Note: B
1. The 2SC454 is grouped by h FE as follows. C 160 to 320 D 250 to 500
100 to 200
2
2SC454
Small Signal y Parameters (VCE = 12 V, IC = 2mA, Emitter Common)
Item Input admittance Symbol yie f 455 kHz 1MHz Reverse transfer admittance yre 455 kHz 1MHz Forward transfer admittance yfe 455 kHz 1MHz Output admittance yoe 455 kHz 1MHz 2SC454B 0.35 + j0.074 0.35 + j0.130 -j0.005 -j0.013 66 - j2.43 66 - j4.27 0.006 + j0.02 0.006 + j0.047 2SC454C 0.28 + j0.070 0.28 + j0.125 -j0.005 -j0.013 64 - j2.60 66 - j5.7 0.007 + j0.022 0.007 + j0.049 mS mS mS Unit mS
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 250 Collector current IC (mA) 200 20
Typical Output Characteristics (1) 100
= PC
16
80 60
20 0 m W
150
12
100
8 4
40 20 A IB = 0
50
0
50 100 150 Ambient Temperature Ta (C)
0
4 8 12 16 20 Collector to Emitter Voltage VCE (V)
3
2SC454
Typical Output Characteristics (2) 5 30 Collector Current IC (mA) Collector Current IC (mA) 4 3 2 10 1 5 A IB = 0 0 4 8 12 16 20 Collector to Emitter Voltage VCE (V) 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) 25 20 15 4 VCE = 12 V 5 Typical Transfer Characteristics (1)
3 2
1
Typical Transfer Characteristics (2) 20 DC Current Transfer Ratio hFE Collector Current IC (mA) 16 300
DC Current Transfer Ratio vs. Collector Current
240 VCE = 12 V 180
VCE = 12 V
12 8
120
4
60
0
0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V)
0 0.1 0.2
0.5 1.0 2 5 10 20 Collector Current IC (mA)
50
4
2SC454
Gain Band width Product vs. Collector Current 500 Gain Bandwidth Product fT (MHz) VCE = 12 V Percentage of Relative to VCE = 12 V (%) 500 goe 200 bie 100 gie 50 boe IC = 2 mA f = 455 kHz, 1 MHz gie b ie boe goe Input/Output Admittance vs. Collector to Emitter Voltage
400
300
200
100
20 10 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V)
0 0.1
0.3 1.0 3 10 Collector Current IC (mA)
30
Percentage of Relative to IC = 2 mA (%)
1,000 500 200 100 50 bie gie 20 boe goe VCE = 12 V f = 455 kHz, 1 MHz goe boe gie bie
Percentage of Relative to VCE = 12 V (%)
Input/Output Admittance vs. Collector Current
Transfer Admittance vs. Collector to Emitter Voltage 500 IC = 2 mA f = 455 kHz, 1 MHz gfe bre bfe
200 100 50
bre bfe gfe
20 10 1 2 5 10 20 50 Collector to Emitter Voltage VCE (V)
10 0.1 0.2 0.5 1.0 2 5 Collector Current IC (mA)
10
5
2SC454
Transfer Admittance vs.Collector Current Percentage of Relative to IC = 2 mA (%) 1,000 500 VCE = 12 V f = 455 kHz, 1 MHz bre bfe gfe bre
200 100 50 20 10 0.1
gfe bfe 0.2 0.5 1.0 2 5 Collector Current IC (mA) 10
6
Unit: mm
4.8 0.3
3.8 0.3
2.3 Max 0.45 0.1 0.7 0.60 Max
12.7 Min
5.0 0.2
0.5
1.27 2.54
Hitachi Code JEDEC EIAJ Weight (reference value)
TO-92 (2) Conforms Conforms 0.25 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.

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